參數(shù)資料
型號(hào)： BYM36G
廠商： NXP SEMICONDUCTORS
元件分類： 參考電壓二極管
英文描述： Fast soft-recovery controlled avalanche rectifiers
中文描述： 1.15 A, 1400 V, SILICON, RECTIFIER DIODE
封裝： HERMETIC SEALED, GLASS PACKAGE-2
文件頁數(shù)： 4/14頁
文件大?。?/td> 78K
代理商： BYM36G
1996 Sep 18
4
Philips Semiconductors
Product specification
Fast soft-recovery
controlled avalanche rectifiers
BYM36 series
THERMAL CHARACTERISTICS
Note
1.
Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer
≥
40
μ
m, see Fig.25.
For more information please refer to the “General Part of associated Handbook”
t
rr
reverse recovery time
BYM36A to C
BYM36D and E
BYM36F and G
diode capacitance
BYM36A to C
BYM36D and E
BYM36F and G
maximum slope of reverse recovery
current
BYM36A to C
BYM36D and E
BYM36F and G
when switched from
I
F
= 0.5 A to I
R
= 1 A;
measured at I
R
= 0.25 A;
see Fig. 26
100
150
250
ns
ns
ns
C
d
f = 1 MHz; V
R
= 0 V;
see Figs 23 and 24
85
75
65
pF
pF
pF
when switched from
I
F
= 1 A to V
R
≥
30 V and
dI
F
/dt =
1 A/
μ
s;
see Fig.27
7
6
5
A/
μ
s
A/
μ
s
A/
μ
s
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-tp
R
th j-a
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
lead length = 10 mm
note 1
25
75
K/W
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
dI
R
dt
--------
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