參數(shù)資料
型號： BYM36G
廠商： NXP SEMICONDUCTORS
元件分類： 參考電壓二極管
英文描述： Fast soft-recovery controlled avalanche rectifiers
中文描述： 1.15 A, 1400 V, SILICON, RECTIFIER DIODE
封裝： HERMETIC SEALED, GLASS PACKAGE-2
文件頁數(shù)： 3/14頁
文件大?。?/td> 78K
代理商： BYM36G
1996 Sep 18
3
Philips Semiconductors
Product specification
Fast soft-recovery
controlled avalanche rectifiers
BYM36 series
ELECTRICAL CHARACTERISTICS
T
j
= 25
°
C unless otherwise specified.
I
FRM
repetitive peak forward current
BYM36A to C
BYM36D and E
BYM36F and G
repetitive peak forward current
BYM36A to C
BYM36D and E
BYM36F and G
non-repetitive peak forward current
T
tp
= 55
°
C; see Figs 8; 9 and 10
37
33
27
A
A
A
I
FRM
T
amb
= 65
°
C; see Figs 11; 12 and 13
13
11
10
65
A
A
A
A
I
FSM
t = 10 ms half sine wave; T
j
= T
j max
prior to surge; V
R
= V
RRMmax
L = 120 mH; T
j
= T
j max
prior to surge;
inductive load switched off
E
RSM
non-repetitive peak reverse
avalanche energy
storage temperature
junction temperature
10
mJ
T
stg
T
j
65
65
+175
+175
°
C
°
C
see Figs 17 and 18
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
F
forward voltage
BYM36A to C
BYM36D and E
BYM36F and G
forward voltage
BYM36A to C
BYM36D and E
BYM36F and G
reverse avalanche breakdown
voltage
BYM36A
BYM36B
BYM36C
BYM36D
BYM36E
BYM36F
BYM36G
reverse current
I
F
= 3 A; T
j
= T
j max
;
see Figs 19; 20 and 21
1.22
1.28
1.24
V
V
V
V
F
I
F
= 3 A;
see Figs 19; 20 and 21
1.60
1.78
1.57
V
V
V
V
(BR)R
I
R
= 0.1 mA
300
500
700
900
1100
1300
1500
V
V
V
V
V
V
V
μ
A
μ
A
I
R
V
R
= V
RRMmax
; see Fig.22
V
R
= V
RRMmax
;
T
j
= 165
°
C; see Fig.22
5
150
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
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