參數(shù)資料
型號(hào): BYM359DX
廠商: NXP SEMICONDUCTORS
元件分類(lèi): 參考電壓二極管
英文描述: Dual diode fast, high-voltage
中文描述: 10 A, 1500 V, SILICON, RECTIFIER DIODE
文件頁(yè)數(shù): 2/7頁(yè)
文件大?。?/td> 60K
代理商: BYM359DX
Philips Semiconductors
Product specification
Dual diode
fast, high-voltage
BYM359DX
ISOLATION LIMITING VALUE & CHARACTERISTIC
T
hs
= 25 C unless otherwise specified
SYMBOL
PARAMETER
V
isol
Repetitive peak voltage from all
three terminals to external
heatsink
C
isol
Capacitance from T2 to external f = 1 MHz
heatsink
CONDITIONS
R.H.
65 % ; clean and dustfree
MIN.
-
TYP.
-
MAX.
2500
UNIT
V
-
22
-
pF
THERMAL RESISTANCES
DAMPER
TYP.
-
MODULATOR
TYP.
-
SYMBOL
R
th j-hs
PARAMETER
Thermal resistance junction to
heatsink
CONDITIONS
with heatsink
compound
MAX.
3.5
MAX.
3.5
UNIT
K/W
R
th j-a
Thermal resistance junction to
ambient
in free air.
35
-
-
35
K/W
STATIC CHARACTERISTICS
T
j
= 25 C unless otherwise stated
DAMPER
TYP.
1.1
1.05
10
50
MODULATOR
TYP.
1.15
1.1
10
100
SYMBOL
V
F
PARAMETER
Forward voltage
CONDITIONS
I
F
= 6.5 A
I
F
= 6.5 A; T
j
= 125C
V
R
= V
RWM
V
R
= V
T
j
= 100 C
MAX.
1.45
1.3
250
500
MAX.
1.55
1.45
100
600
UNIT
V
V
μ
A
μ
A
I
R
Reverse current
DYNAMIC CHARACTERISTICS
T
j
= 25 C unless otherwise stated
DAMPER
TYP.
200
MODULATOR
TYP.
125
SYMBOL
t
rr
PARAMETER
Reverse recovery time
CONDITIONS
I
= 1 A; V
30 V;
-dI
/dt = 50 A/
μ
s
2 A,30 V,20 A/
μ
s
I
F
= 6.5 A;
dI
F
/dt = 50 A/
μ
s
MAX.
300
MAX.
145
UNIT
ns
Q
s
V
fr
Reverse recovery charge
Peak forward recovery voltage
1.2
27
2.0
-
0.5
18.0
0.7
-
μ
C
V
March 2000
2
Rev 1.000
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