參數(shù)資料
型號: BYM359DX
廠商: NXP SEMICONDUCTORS
元件分類: 參考電壓二極管
英文描述: Dual diode fast, high-voltage
中文描述: 10 A, 1500 V, SILICON, RECTIFIER DIODE
文件頁數(shù): 1/7頁
文件大小: 60K
代理商: BYM359DX
Philips Semiconductors
Product specification
Dual diode
fast, high-voltage
BYM359DX
FEATURES
SYMBOL
QUICK REFERENCE DATA
Low forward volt drop
Fast switching
Soft recovery characteristic
High thermal cycling
performance
Isolated mounting tab
DAMPER
MODULATOR
V
R
=1500 V
V
R
=800 V
V
F
1.3 V
V
F
1.45 V
I
F(RMS)
=15.7 A
I
F(RMS)
= 11 A
I
FSM
60 A
I
FSM
60 A
t
rr
300 ns
t
rr
145 ns
GENERAL DESCRIPTION
PINNING
SOT399
Combined damper and modulator
diodes
in
an
envelopeforhorizontaldeflectionin
colour TV and PC monitors.
The BYM359DX contains diodes
with performance characteristics
designed specifically for
applications from 16kHz to 56kHz
PIN
DESCRIPTION
isolated
plastic
1
modulator anode.
2
common anode/cathode
3
damper cathode
The BYM359DX series is supplied
in theconventional leadedSOT399
package.
LIMITING VALUES
T
j
= 25 C unless otherwise stated
DAMPER
MIN
-
MODULATOR
MIN
-
SYMBOL
V
RSM
PARAMETER
Peak non-repetitive reverse
voltage.
Peak repetitive reverse voltage
CONDITIONS
MAX
1500
MAX
800
UNIT
V
V
RRM
-
1500
-
600
V
V
RWM
Crest working reverse voltage
-
1300
-
600
V
I
F(AV)
I
F(RMS)
I
FRM
Average forward current
RMS forward current
Peak repetitive forward current
sinusoidal;a=1.57
-
-
-
10
15.7
20
-
-
-
8
A
A
A
11.0
16.0
t=25
μ
s
δ
= 0.5
T
83 C
t = 10ms
t = 8.3 ms
sinusoidal;
with reapplied
V
RWM(MAX)
I
FSM
Peak non-repetitive forward
current
-
-
60
66
-
-
60
66
A
A
T
stg
T
J
Storage temperature
Operating junction temperature
-40
-
150
150
-40
-
150
150
C
C
1
3
2
damper
modulator
case
1 2 3
March 2000
1
Rev 1.000
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