參數(shù)資料
型號: BYC8B-600
廠商: NXP Semiconductors N.V.
元件分類: 參考電壓二極管
英文描述: Hyperfast power diode
封裝: BYC8B-600<SOT404 (D2PAK)|<<http://www.nxp.com/packages/SOT404.html<1<week 1, 2005,;
文件頁數(shù): 4/8頁
文件大小: 117K
代理商: BYC8B-600
Semiconductors
Product specification
Rectifier diode
ultrafast, low switching loss
BYC8B-600
Fig.3. Maximum forward dissipation as a function of
average forward current; rectangular current
waveform where I
F(AV)
=I
F(RMS)
x
D.
Fig.4. Typical reverse recovery switching losses in
diode, as a function of rate of change of current dI
F
/dt.
Fig.5. Typical switching losses in transistor due to
reverse recovery of diode, as a function of of change
of current dI
F
/dt.
Fig.6. Origin of switching losses in transistor due to
diode reverse recovery.
Fig.7. Typical reverse recovery time t
rr
, as a function
of rate of change of current dI
F
/dt.
Fig.8. Typical peak reverse recovery current, I
rrm
as a
function of rate of change of current dI
F
/dt.
0
2
4
6
8
10
12
0
5
10
15
20
25
D = 1.0
0.5
0.2
0.1
BYC8-600
Rs = 0.05625 Ohms
Vo = 1.4 V
150
Average forward current, IF(AV) (A)
Forward dissipation, PF (W)
Tmb(max) C
139
128
117
106
95
D =
t
p
t
p
T
T
t
I
time
ID
Irrm
VD
dIF/dt
ID = IL
losses due to
diode reverse recovery
100
1000
0
0.05
0.1
0.15
0.2
0.25
BYC8-600
Rate of change of current, dIF/dt (A/us)
f = 20 kHz
Tj = 125 C
VR = 400 V
Diode reverse recovery switching losses, Pdsw (W)
IF = 8 A
16 A
12 A
100
1000
10
100
BYC8-600
Rate of change of current, dIF/dt (A/us)
Reverse recovery time, trr (ns)
IF = 5 A
16 A
12 A
8 A
Tj = 125 C
VR = 400 V
100
1000
0
1
2
3
4
5
6
7
8
BYC8-600
Rate of change of current, dIF/dt (A/us)
Transistor losses due to diode reverse recovery, Ptsw (W)
IF = 5 A
12 A
16 A
8 A
f = 20 kHz
Tj = 125 C
VR = 400 V
100
1000
1
10
100
BYC8-600
Rate of change of current, dIF/dt (A/us)
Peak reverse recovery current, Irrm (A)
Tj = 125 C
VR = 400 V
IF = 5 A
16 A
March 2001
3
Rev 1.400
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