參數(shù)資料
型號(hào): BYC58X-600
廠商: NXP SEMICONDUCTORS
元件分類: 參考電壓二極管
英文描述: Casco diode
中文描述: 8 A, 600 V, SILICON, RECTIFIER DIODE, TO-220
封裝: PLASTIC, TO-220F, 2 PIN
文件頁(yè)數(shù): 5/11頁(yè)
文件大小: 174K
代理商: BYC58X-600
BYC58X-600_1
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 01 — 23 February 2010
5 of 11
NXP Semiconductors
BYC58X-600
8 A hyperfast rectifier diode
7.
Characteristics
Table 7.
Symbol
Static characteristics
V
F
Characteristics
Parameter
Conditions
Min
Typ
Max
Unit
forward voltage
I
F
= 8 A; T
j
= 25 °C; see
Figure 4
I
F
= 8 A; T
j
= 150 °C; see
Figure 4
V
R
= 600 V; T
j
= 25 °C
-
-
-
2.35
2
-
3.2
2.4
150
V
V
μA
I
R
Dynamic characteristics
Q
r
recovered charge
reverse current
I
F
= 8 A; V
R
= 400 V; dI
F
/dt = 200 A/μs;
T
j
= 125 °C; see
Figure 5
and
6
I
F
= 8 A; V
R
= 400 V; dI
F
/dt = 200 A/μs;
T
j
= 25 °C; see
Figure 6
I
F
= 8 A; V
R
= 400 V; dI
F
/dt = 200 A/μs;
T
j
= 125 °C; see
Figure 6
and
7
I
F
= 8 A; V
R
= 400 V; dI
F
/dt = 200 A/μs;
T
j
= 125 °C
-
40
-
nC
t
rr
reverse recovery time
-
12.5
-
ns
-
21
-
ns
I
RM
peak reverse recovery
current
-
4
5.5
A
Fig 4.
Forward current as a function of forward
voltage
Fig 5.
Recovered charge as a function of rate of
change of forward current; Tj = 125 °C; typical
values
003aae163
0
4
8
12
16
20
0
1
2
3
4
V
F
(V)
I
F
(A)
(1)
(2)
(3)
dI
F
/dt (A/
μ
s)
0
500
400
200
300
100
003aae182
140
Q
r
(nC)
120
100
60
20
0
40
80
(1)
(2)
(3)
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