參數(shù)資料
型號(hào): BYC58X-600
廠商: NXP SEMICONDUCTORS
元件分類: 參考電壓二極管
英文描述: Casco diode
中文描述: 8 A, 600 V, SILICON, RECTIFIER DIODE, TO-220
封裝: PLASTIC, TO-220F, 2 PIN
文件頁數(shù): 3/11頁
文件大小: 174K
代理商: BYC58X-600
BYC58X-600_1
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 01 — 23 February 2010
3 of 11
NXP Semiconductors
BYC58X-600
8 A hyperfast rectifier diode
4.
Limiting values
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
Limiting values
Symbol
V
RRM
Parameter
repetitive peak reverse
voltage
crest working reverse
voltage
average forward
current
repetitive peak forward
current
non-repetitive peak
forward current
Conditions
Min
-
Max
600
Unit
V
V
RWM
-
600
V
I
F(AV)
square-wave pulse;
δ
= 0.5; T
h
93 °C; see
Figure 1
and
2
square-wave pulse;
δ
= 0.5; t
p
= 25 μs
-
8
A
I
FRM
-
16
A
I
FSM
t
p
= 10 ms; sine-wave pulse; T
j(init)
= 25 °C
t
p
= 8.3 ms; sine-wave pulse; T
j(init)
= 25 °C
-
-
-40
-
110
120
150
150
A
A
°C
°C
T
stg
T
j
storage temperature
junction temperature
Fig 1.
Forward power dissipation as a function of
average forward current; square waveform;
maximum values
Fig 2.
Forward power dissipation as a function of
average forward current; sinusoidal waveform;
maximum values
0
4
8
12
16
20
24
28
0
4
8
12
I
F(AV)
(A)
P
tot
(W)
δ
= 1
0.5
0.2
0.1
003aae164
90
102
114
126
138
150
78
66
T
h
(max)
(
°
C)
003aae165
0
4
8
12
16
20
0
2
4
6
8
I
F(AV)
(A)
P
tot
(W)
a = 180
°
120
90
60
30
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