參數(shù)資料
型號： BYC10B-600
廠商： NXP Semiconductors N.V.
元件分類： 參考電壓二極管
英文描述： Hyperfast power diode
封裝： BYC10B-600<SOT404 (D2PAK)|<<http://www.nxp.com/packages/SOT404.html<1<week 1, 2005,;
文件頁數(shù)： 4/8頁
文件大?。?/td> 115K
代理商： BYC10B-600
Semiconductors
Product specification
Rectifier diode
ultrafast, low switching loss
BYC10B-600
Fig.3. Maximum forward dissipation as a function of
average forward current; rectangular current
waveform where I
F(AV)
=I
F(RMS)
x
√
D.
Fig.4. Typical reverse recovery switching losses in
diode, as a function of rate of change of current dI
F
/dt.
Fig.5. Typical switching losses in transistor due to
reverse recovery of diode, as a function of of change
of current dI
F
/dt.
Fig.6. Origin of switching losses in transistor due to
diode reverse recovery.
Fig.7. Typical reverse recovery time t
rr
, as a function
of rate of change of current dI
F
/dt.
Fig.8. Typical peak reverse recovery current, I
rrm
as a
function of rate of change of current dI
F
/dt.
0
5
10
15
0
5
10
15
20
25
30
0.5
0.2
0.1
BYC10-600
Rs = 0.05 Ohms
Vo = 1.3 V
D = 1.0
150
Average forward current, IF(AV) (A)
Forward dissipation, PF (W)
Tmb(max) C
140
130
120
110
100
90
D =
t
p
t
p
T
T
t
I
time
ID
Irrm
VD
dIF/dt
ID = IL
losses due to
diode reverse recovery
100
1000
0
0.05
0.1
0.15
0.2
0.25
Rate of change of current, dIF/dt (A/us)
f = 20 kHz
Tj = 125 C
VR = 400 V
Diode reverse recovery switching losses, Pdsw (W)
IF = 5 A
20 A
10 A
100
1000
10
100
BYC10-600
Rate of change of current, dIF/dt (A/us)
Reverse recovery time, trr (ns)
Tj = 125 C
VR = 400 V
IF = 5 A
20 A
10 A
100
1000
0
1
2
3
4
5
6
7
8
BYC10-600
Rate of change of current, dIF/dt (A/us)
Transistor losses due to diode reverse recovery, Ptsw (W)
IF = 5 A
10 A
20 A
f = 20 kHz
Tj = 125 C
VR = 400 V
100
1000
1
10
100
BYC10-600
Rate of change of current, dIF/dt (A/us)
Peak reverse recovery current, Irrm (A)
Tj = 125 C
VR = 400 V
IF = 5 A
20 A
March 2001
3
Rev 1.400
相關PDF資料
PDF描述
BYC10D-600 Hyperfast power diode
BYC10DX-600 Hyperfast power diode
BYC10X-600 Hyperfast power diode
BYC15-600 Hyperfast power diode
BYC15X-600 Hyperfast power diode
相關代理商/技術參數(shù)
參數(shù)描述
BYC10B-600 /T3 功能描述:整流器 TAPE13 PWRDIODE RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復時間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel
BYC10B-600,118 功能描述:整流器 TAPE13 PWRDIODE RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復時間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel
BYC10D-600 制造商:NXP Semiconductors 功能描述:DIODE HYPERFAST 10A 600V TO220AC 制造商:NXP Semiconductors 功能描述:DIODE, HYPERFAST, 10A, 600V, TO220AC 制造商:NXP Semiconductors 功能描述:DIODE, HYPERFAST, 10A, 600V, TO220AC; Diode Type:Ultrafast Recovery; Diode Configuration:Single; Repetitive Reverse Voltage Vrrm Max:600V; Forward Current If(AV):10A; Forward Voltage VF Max:2.5V; Reverse Recovery Time trr Max:30ns ;RoHS Compliant: Yes
BYC10D-600,127 功能描述:二極管 - 通用，功率，開關 PWR 600 V 10 A RoHS:否 制造商:STMicroelectronics 產(chǎn)品:Switching Diodes 峰值反向電壓:600 V 正向連續(xù)電流:200 A 最大浪涌電流:800 A 配置: 恢復時間:2000 ns 正向電壓下降:1.25 V 最大反向漏泄電流:300 uA 最大功率耗散: 工作溫度范圍: 安裝風格:SMD/SMT 封裝 / 箱體:ISOTOP 封裝:Tube
BYC10DX-600 制造商:NXP Semiconductors 功能描述:DIODE HYPERFAST 10A 600V TO220F 制造商:NXP Semiconductors 功能描述:DIODE, HYPERFAST, 10A, 600V, TO220F 制造商:NXP Semiconductors 功能描述:DIODE, HYPERFAST, 10A, 600V, TO220F; Diode Type:Ultrafast Recovery; Diode Configuration:Single; Repetitive Reverse Voltage Vrrm Max:600V; Forward Current If(AV):10A; Forward Voltage VF Max:2.5V; Reverse Recovery Time trr Max:30ns ;RoHS Compliant: Yes
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