參數(shù)資料
型號(hào)： BY329X
廠商： NXP SEMICONDUCTORS
元件分類： 參考電壓二極管
英文描述： Triac; Thyristor Type:Snubberless; Peak Repetitive Off-State Voltage, Vdrm:800V; On-State RMS Current, IT(rms):6A; Gate Trigger Current (QI), Igt:50mA; Current, It av:6A; Gate Trigger Current Max, Igt:50mA RoHS Compliant: Yes
中文描述： 8 A, 1200 V, SILICON, RECTIFIER DIODE
文件頁(yè)數(shù)： 3/6頁(yè)
文件大?。?/td> 49K
代理商： BY329X
Philips Semiconductors
Product specification
Rectifier diodes
fast, soft-recovery
BY329X series
Fig.1. Definition of t
rr
, Q
s
and I
rrm
Fig.2. Maximum forward dissipation, P
= f(I
);
square wave current waveform; parameter D = duty
cycle = t
p
/T
Fig.3. Maximum forward dissipation, P
= f(I
);
sinusoidal current waveform; parameter a = form
factor = I
F(RMS)
/I
F(AV)
.
Fig.4. Maximum non-repetitive rms forward current.
I
F
= f(t
p
);sinusoidal current waveform; T
j
= 150C prior
to surge with reapplied V
RWM
.
Fig.5. Typical and maximum forward characteristic;
I
F
= f(V
F
); parameter T
j
Fig.6. Maximum Q
s
at T
j
= 25C and 150C
100%
time
dI
dt
F
IR
IF
Irrm
trr
25%
Qs
1ms
10ms
0.1s
tp / s
1s
10s
IFS (RMS) / A
BY329
100
90
80
70
60
50
40
30
20
10
0
IFSM
0
1
BY229F
VF / V
IF / A
30
20
10
0
2
0.5
1.5
max
typ
Tj = 150 C
Tj = 25 C
0
2
4
6
8
10
12
BY329
IF(AV) / A
PF / W
20
15
10
5
0
Ths(max) / C
150
54
78
102
126
0.5
0.2
0.1
D = 1.0
D =
t
p
t
p
T
T
I
t
Vo = 1.25 V
Rs = 0.03 Ohms
1
100
BY329
-dIF/dt (A/us)
Qs / uC
Tj = 150 C
Tj = 25 C
10
1
0.1
10
2 A
IF = 10 A
10 A
1 A
2 A
1 A
0
2
4
6
8
BY329
IF(AV) / A
PF / W
15
10
5
0
4
2.8
2.2
1.9
a = 1.57
Ths(max) / C
150
78
102
126
Vo = 1.25 V
Rs = 0.03 Ohms
May 1995
3
Rev 1.000
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