參數(shù)資料
型號: BY329X
廠商: NXP SEMICONDUCTORS
元件分類: 參考電壓二極管
英文描述: Triac; Thyristor Type:Snubberless; Peak Repetitive Off-State Voltage, Vdrm:800V; On-State RMS Current, IT(rms):6A; Gate Trigger Current (QI), Igt:50mA; Current, It av:6A; Gate Trigger Current Max, Igt:50mA RoHS Compliant: Yes
中文描述: 8 A, 1200 V, SILICON, RECTIFIER DIODE
文件頁數(shù): 1/6頁
文件大?。?/td> 49K
代理商: BY329X
Philips Semiconductors
Product specification
Rectifier diodes
fast, soft-recovery
BY329X series
GENERAL DESCRIPTION
QUICK REFERENCE DATA
Glass-passivated
rectifier diodes in a full pack plastic
envelope
featuring
voltage drop, fast reverse recovery
and soft recovery characteristic. The
devices are intended for use in TV
receivers, monitors and switched
mode power supplies.
double
diffused
SYMBOL
PARAMETER
MAX.
MAX.
MAX.
UNIT
low
forward
BY329X
-800
800
-1000 -1200
1000
V
RRM
Repetitive peak reverse
voltage
Average forward current
Non-repetitive peak
forward current
Reverse recovery time
1200
V
I
F(AV)
I
FSM
8
8
8
A
A
65
65
65
t
rr
145
145
145
ns
PINNING - SOD113
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
cathode
2
anode
case isolated
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
-1000
1000
UNIT
-800
800
-1200
1200
V
RSM
Non-repetitive peak reverse
voltage
Repetitive peak reverse voltage
Crest working reverse voltage
Average forward current
1
-
V
V
RRM
V
RWM
I
F(AV)
-
-
-
800
600
1000
800
8
1200
1000
V
V
A
square wave;
δ
= 0.5;
T
83 C
sinusoidal; a = 1.57;
T
hs
90 C
-
7
A
I
F(RMS)
I
FRM
RMS forward current
Repetitive peak forward current t = 25
μ
s;
δ
= 0.5;
-
-
11
16
A
A
T
83 C
t = 10 ms
t = 8.3 ms
sinusoidal; T
= 150 C prior
to surge; with reapplied
V
t = 10 ms
I
FSM
Non-repetitive peak forward
current.
-
-
65
71
A
A
I
2
t
T
stg
T
j
I
2
t for fusing
Storage temperature
Operating junction temperature
-
28
150
150
A
2
s
C
C
-40
-
1
2
case
k
1
a
2
1
Neglecting switching and reverse current losses.
May 1995
1
Rev 1.000
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