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    參數(shù)資料
    型號(hào): BY329
    廠商: NXP SEMICONDUCTORS
    元件分類: 參考電壓二極管
    英文描述: Triac; Thyristor Type:Standard; Peak Repetitive Off-State Voltage, Vdrm:400V; On State RMS Current, IT(rms):6A; Gate Trigger Current (QI), Igt:50mA; Current, It av:6A; Gate Trigger Current Max, Igt:50mA RoHS Compliant: Yes
    中文描述: 8 A, 1200 V, SILICON, RECTIFIER DIODE
    封裝: TO-220AC, 2 PIN
    文件頁數(shù): 2/6頁
    文件大小: 50K
    代理商: BY329
    Philips Semiconductors
    Product specification
    Rectifier diodes
    fast, soft-recovery
    BY329 series
    THERMAL RESISTANCES
    SYMBOL
    PARAMETER
    R
    th j-mb
    Thermal resistance junction to
    mounting base
    R
    th j-a
    Thermal resistance junction to
    ambient
    CONDITIONS
    MIN.
    -
    TYP.
    -
    MAX.
    2.0
    UNIT
    K/W
    in free air.
    -
    60
    -
    K/W
    STATIC CHARACTERISTICS
    T
    j
    = 25 C unless otherwise stated
    SYMBOL
    PARAMETER
    V
    F
    Forward voltage
    I
    R
    Reverse current
    CONDITIONS
    I
    F
    = 20 A
    V
    R
    = V
    RWM
    ; T
    j
    = 125 C
    MIN.
    -
    -
    TYP.
    1.5
    0.1
    MAX.
    1.85
    1.0
    UNIT
    V
    mA
    DYNAMIC CHARACTERISTICS
    T
    j
    = 25 C unless otherwise stated
    SYMBOL
    PARAMETER
    t
    rr
    Reverse recovery time
    Q
    s
    Reverse recovery charge
    dI
    R
    /dt
    Maximum slope of the reverse
    recovery current
    CONDITIONS
    I
    F
    = 1 A; V
    R
    > 30 V; -dI
    F
    /dt = 50 A/
    μ
    s
    I
    F
    = 2 A; V
    R
    > 30 V; -dI
    F
    /dt = 20 A/
    μ
    s
    I
    F
    = 2 A; -dI
    F
    /dt = 20 A/
    μ
    s
    MIN.
    -
    -
    -
    TYP.
    100
    0.5
    50
    MAX.
    135
    0.7
    60
    UNIT
    ns
    μ
    C
    A/
    μ
    s
    September 1998
    2
    Rev 1.200
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