- 您現(xiàn)在的位置：買(mǎi)賣(mài)IC網(wǎng) > PDF目錄369577 > BUX85F (NXP SEMICONDUCTORS) Silicon diffused power transistors PDF資料下載
參數(shù)資料
| 型號(hào)： | BUX85F |
| 廠(chǎng)商： | NXP SEMICONDUCTORS |
| 元件分類(lèi)： | 功率晶體管 |
| 英文描述： | Silicon diffused power transistors |
| 中文描述： | 2 A, 450 V, NPN, Si, POWER TRANSISTOR, TO-220 |
| 封裝： | PLASTIC, TO-220, 3 PIN |
| 文件頁(yè)數(shù)： | 2/12頁(yè) |
| 文件大?。?/td> | 79K |
| 代理商： | BUX85F |
1997 Aug 14
2
Philips Semiconductors
Product specification
Silicon diffused power transistors
BUX84F; BUX85F
DESCRIPTION
High-voltage, high-speed,
glass-passivated NPN power
transistor in a SOT186 package with
electrically isolated mounting base.
APPLICATIONS
Converters
Inverters
Switching regulators
Motor control systems.
PINNING
PIN
DESCRIPTION
1
2
3
base
collector
emitter
mounting base;
electrically isolated
from all pins
mb
Fig.1
Simplified outline
(SOT186) and symbol.
MBK109
1 2 3
3
2
1
MBB008
QUICK REFERENCE DATA
THERMAL CHARACTERISTICS
Notes
1.
2.
Mounted
without
heatsink compound and 30
±
5 N force on centre of package.
Mounted
with
heatsink compound and 30
±
5 N force on centre of package.
ISOLATION CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
V
CESM
collector-emitter peak voltage
BUX84F
BUX85F
collector-emitter voltage
BUX84F
BUX85F
collector-emitter saturation voltage
collector saturation current
collector current (DC)
collector current (peak value)
total power dissipation
fall time
V
BE
= 0
800
1000
V
V
V
CEO
open base
0.4
400
450
1
1
2
3
18
V
V
V
A
A
A
W
μ
s
V
CEsat
I
Csat
I
C
I
CM
P
tot
t
f
see Fig.4
T
h
≤
25
°
C
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-h
thermal resistance from junction to external heatsink
note 1
note 2
7.2
4.7
55
K/W
K/W
K/W
R
th j-a
thermal resistance from junction to ambient
SYMBOL
PARAMETER
TYP.
MAX.
UNIT
V
isolM
C
isol
isolation voltage from all terminals to external heatsink (peak value)
isolation capacitance from collector to external heatsink
12
1500
V
pF
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BUX84F | Silicon diffused power transistors |
| BUX85 | Silicon diffused power transistors |
| BUX85 | SWITCHMODE SERIES NPN POWER TRANSISTORS |
| BUX85 | POWER TRANSISTORS(2A,400-450V,40W) |
| BUX86P | Silicon Diffused Power Transistor(硅擴(kuò)散功率型晶體管) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BUX85F/B | 制造商:未知廠(chǎng)家 制造商全稱(chēng):未知廠(chǎng)家 功能描述:TRANSISTOR ISOLATED SOT-186 |
| BUX85G | 功能描述:兩極晶體管 - BJT 2A 450V 50W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| BUX85G | 制造商:ON Semiconductor 功能描述:Bipolar Transistor |
| BUX86 | 制造商:INFINEON 制造商全稱(chēng):Infineon Technologies AG 功能描述:NPN SILICON HIGH VWLTAGE SWITCHING TRANSISTORS |
| BUX86P | 制造商:NXP Semiconductors 功能描述:TRANSISTOR NPN SOT-82 |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。