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參數(shù)資料
| 型號： | BUX85 |
| 廠商： | Boca Semiconductor Corp. |
| 英文描述： | SWITCHMODE SERIES NPN POWER TRANSISTORS |
| 中文描述： | NPN電源開關(guān)模式系列三極管 |
| 文件頁數(shù)： | 3/12頁 |
| 文件大?。?/td> | 94K |
| 代理商： | BUX85 |
1997 Aug 13
3
Philips Semiconductors
Product specification
Silicon diffused power transistors
BUX84; BUX85
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
CHARACTERISTICS
T
j
= 25
°
C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CESM
collector-emitter peak voltage
BUX84
BUX85
collector-emitter voltage
BUX84
BUX85
collector current (DC)
collector current (peak value)
base current (DC)
base current (peak value)
base current (reversed; peak value) turn-off current
total power dissipation
storage temperature
junction temperature
V
BE
= 0
800
1000
V
V
V
CEO
open base
65
400
450
2
3
0.75
1
1
40
+150
150
V
V
A
A
A
A
A
W
°
C
°
C
I
C
I
CM
I
B
I
BM
I
BM
P
tot
T
stg
T
j
see Figs 4 and 5
t
p
= 2 ms; see Figs 4 and 5
T
mb
≤
25
°
C; see Fig.8
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
CEOsust
collector-emitter sustaining voltage
BUX84
BUX85
collector-emitter saturation voltage
I
C
= 100 mA; I
Boff
= 0;
L = 25 mH; see Figs 2 and 3
400
450
0.8
V
V
V
V
CEsat
I
C
= 0.3 A; I
B
= 30 mA;
see Fig.7
I
C
= 1 A; I
B
= 200 mA; see Fig.7
I
C
= 1 A; I
B
= 200 mA; see Fig.9
V
CEM
= V
CEMSmax
; V
BE
= 0;
note 1
V
CEM
= V
CEMSmax
; V
BE
= 0;
T
j
= 125
°
C; note 1
V
EB
= 5 V; I
C
= 0
V
CE
= 5 V; I
C
= 5 A; see Fig.10
V
CE
= 5 V; I
C
= 100 mA;
see Fig.10
V
CE
= 10 V; I
C
= 200 mA;
f = 1 MHz
1
1.1
200
V
V
μ
A
V
BEsat
I
CES
base-emitter saturation voltage
collector-emitter cut-off current
1.5
mA
I
EBO
h
FE
emitter-base cut-off current
DC current gain
15
20
50
1
100
mA
f
T
transition frequency
20
MHz
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BUX85 | POWER TRANSISTORS(2A,400-450V,40W) |
| BUX86P | Silicon Diffused Power Transistor(硅擴(kuò)散功率型晶體管) |
| BUX87P | Silicon Diffused Power Transistor(硅擴(kuò)散功率型晶體管) |
| BUX88 | QUAD CHANNEL HIGH SIDE DRIVER |
| BUXD87-1 | TRANSISTOR | BJT | NPN | 450V V(BR)CEO | 500MA I(C) | TO-251 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BUX85,127 | 功能描述:兩極晶體管 - BJT BUX85/SOT78/RAILH// RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| BUX85 | 制造商:NXP Semiconductors 功能描述:TRANSISTOR NPN TO-220AB |
| BUX85/B | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR HOCHSPANNUNG BIPOLAR |
| BUX85/D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:SWITCHMODE NPN Silicon Power Transistors |
| BUX85F | 制造商:ISC 制造商全稱:Inchange Semiconductor Company Limited 功能描述:Silicon NPN Power Transistors |
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