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參數(shù)資料
| 型號： | BUW14 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | Silicon Diffused Power Transistor |
| 中文描述： | 0.5 A, 450 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | PLASTIC PACKAGE-3 |
| 文件頁數(shù)： | 4/6頁 |
| 文件大?。?/td> | 63K |
| 代理商： | BUW14 |
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BUW14
Fig.9. Forward bias safe operating area.
(1) P
max line.
(2) Second-breakdown limits.
I Region of permissible DC operation.
II Permissible extension for repetitive pulse
operation.
III Area of permissible operation during turn-on
in single transistor converters, provided
R
≤
100
and tp
≤
0.6
μ
s.
IV Repetitive pulse operation in this region is
permissible provided V
BE
≤
0 and tp
≤
2 ms.
Fig.10. Transient thermal impedance.
Z
th j-mb
= f(t); parameter
δ
= duty cycle.
March 1992
4
Rev 1.000
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| BUW19 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 30A I(C) |
| BUW22 | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:Bipolar PNP Device in a Hermetically sealed TO3 Metal Package |
| BUW22A | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:Bipolar PNP Device in a Hermetically sealed TO3 Metal Package |
| BUW22AP | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 400V V(BR)CEO | 6A I(C) | TO-220AB |
| BUW22P | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 350V V(BR)CEO | 6A I(C) | TO-220AB |
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