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參數(shù)資料
| 型號： | BUW14 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | Silicon Diffused Power Transistor |
| 中文描述： | 0.5 A, 450 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | PLASTIC PACKAGE-3 |
| 文件頁數(shù)： | 3/6頁 |
| 文件大小： | 63K |
| 代理商： | BUW14 |
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BUW14
Fig.3. Test circuit resistive load. V
= -6 to +8 V
V
= 150 V; tp = 20
μ
s;
δ
= tp / T = 0.01.
R
B
and R
L
calculated from I
Con
and I
Bon
requirements.
Fig.4. Switching times waveforms with resistive load.
Fig.5. Normalised power dissipation.
PD% = 100
P
D
/P
D 25C
= f (T
mb
)
Fig.6. Typical DC current gain. h
FE
= f(I
C
)
parameter V
CE
Fig.7. Typical collector-emitter saturation voltage.
V
CE
sat = f(I
B
); parameter I
C
Fig.8. Typical base-emitter saturation voltage.
V
BE
sat = f(I
B
); parameter I
C
tp
T
VCC
R
R
T.U.T.
0
VIM
B
L
0.01
0.1
IC / A
1
hFE
BUW14
1000
100
10
1
Tj = 25 C
Tj = 125 C
5V
1V
IC
IB
10 %
10 %
90 %
90 %
ton
toff
ts
tf
IBon
-IBoff
ICon
tr
30ns
0.001
0.1
IB / A
VCESAT / V
BUW14
10
1
0.1
0.01
0.01
1.0
0.2 A
0.1 A
IC=0.05 A
Tj = 25 C
Tj = 125 C
0
20
40
60
80
100
120
140
Tmb / C
PD%
Normalised Power Derating
120
110
100
90
80
70
60
50
40
30
20
10
0
0
0.04
0.08
0.12
0.16
0.2
IB / A
VBESAT / V
BUW14
1
0.9
0.8
0.7
0.6
0.5
0.4
IC=
50 mA
100 mA
200 mA
Tj = 25 C
Tj = 125 C
March 1992
3
Rev 1.000
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