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| 型號： | BUW13F |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | Silicon diffused power transistors |
| 中文描述： | 15 A, 400 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | PLASTIC, SOT-199, 3 PIN |
| 文件頁數(shù)： | 9/16頁 |
| 文件大小： | 105K |
| 代理商： | BUW13F |
1997 Aug 13
9
Philips Semiconductors
Product specification
Silicon diffused power transistors
BUW13F; BUW13AF
Fig.10 Collector-emitter saturation voltage as a
function of base current.
(1) I
C
= 5 A.
(2) I
C
= 10 A.
(3) I
C
= 15 A.
T
j
= 25
°
C; solid line: typical values; dotted line: maximum values.
handbook, halfpage
10
2
10
1
10
1
1
1
VCEsat
(V)
IB (A)
10
MGB871
(1)
(2)
(3)
Fig.11 DC current gain; typical values.
T
j
= 125
°
C.
handbook, halfpage
MBC098
2
10
2
10
1
1
10
10
2
10
1
IC (A)
hFE
VCE = 5 V
1V
V
CC
= 250 V; t
p
= 20
μ
s; V
IM
=
6 to +8 V; t
p
/T = 0.01.
The values of R
B
and R
L
are selected in accordance with I
Con
and
I
Bon
requirements.
handbook, halfpage
MGE244
VCC
D.U.T.
RL
RB
VIM
tp
T
0
Fig.12 Test circuit resistive load.
Fig.13 Switching time waveforms with
resistive load.
t
r
≤
20 ns.
handbook, halfpage
MBB731
t
90%
10%
90%
10%
IC
IB
IB on
IB off
IC on
tr
≤
30 ns
ts
tf
ton
t
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| BUW13AW | Silicon diffused power transistors |
| BUW13W | Silicon diffused power transistors |
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相關(guān)代理商/技術(shù)參數(shù) |
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| BUW13W | 制造商:ISC 制造商全稱:Inchange Semiconductor Company Limited 功能描述:Silicon NPN Power Transistors |
| BUW14 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Silicon Diffused Power Transistor |
| BUW19 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 30A I(C) |
| BUW22 | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:Bipolar PNP Device in a Hermetically sealed TO3 Metal Package |
| BUW22A | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:Bipolar PNP Device in a Hermetically sealed TO3 Metal Package |
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