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參數(shù)資料
| 型號： | BUW13F |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | Silicon diffused power transistors |
| 中文描述： | 15 A, 400 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | PLASTIC, SOT-199, 3 PIN |
| 文件頁數(shù)： | 2/16頁 |
| 文件大小： | 105K |
| 代理商： | BUW13F |
1997 Aug 13
2
Philips Semiconductors
Product specification
Silicon diffused power transistors
BUW13F; BUW13AF
DESCRIPTION
High-voltage, high-speed,
glass-passivated NPN power
transistor in a SOT199 package.
APPLICATIONS
Converters
Inverters
Switching regulators
Motor control systems.
PINNING
PIN
DESCRIPTION
1
2
3
base
collector
emitter
mounting base;
electrically isolated
mb
ook, halfpage
1
2
3
MSB012
Front view
Fig.1 Simplified outline (SOT199) and symbol.
handbook, halfpage
3
2
1
MBB008
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MAX.
UNIT
V
CESM
collector-emitter peak voltage
BUW13F
BUW13AF
collector-emitter voltage
BUW13F
BUW13AF
collector-emitter saturation voltage
collector saturation current
BUW13F
BUW13AF
collector current (DC)
collector current (peak value)
total power dissipation
fall time
V
BE
= 0
850
1000
V
V
V
CEO
open base
400
450
1.5
V
V
V
V
CEsat
I
Csat
see Figs 8 and 10
10
8
15
30
37
0.8
A
A
A
A
W
μ
s
I
C
I
CM
P
tot
t
f
see Figs 3 and 4
t
p
< 20 ms; see Fig 4
T
h
≤
25
°
C; see Fig.2
resistive load; see Fig.13
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PDF描述 |
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| BUW13AW | Silicon diffused power transistors |
| BUW13W | Silicon diffused power transistors |
| BUW14 | Silicon Diffused Power Transistor |
| BUW19 | TRANSISTOR | BJT | NPN | 30A I(C) |
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| BUW13W | 制造商:ISC 制造商全稱:Inchange Semiconductor Company Limited 功能描述:Silicon NPN Power Transistors |
| BUW14 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Silicon Diffused Power Transistor |
| BUW19 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 30A I(C) |
| BUW22 | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:Bipolar PNP Device in a Hermetically sealed TO3 Metal Package |
| BUW22A | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:Bipolar PNP Device in a Hermetically sealed TO3 Metal Package |
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