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參數(shù)資料
| 型號： | BUV50 |
| 廠商： | 意法半導體 |
| 英文描述： | High Power NPN Silicon Transistor(高功率NPN硅晶體管) |
| 中文描述： | 高功率NPN硅晶體管（高功率npn型硅晶體管） |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 50K |
| 代理商： | BUV50 |
THERMAL DATA
R
thj-case
Thermal Resistance Junction-case
Max
1.17
o
C/W
ELECTRICAL CHARACTERISTICS
(T
case
= 25
o
C unlessotherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
CER
Collector Cut-off
Current (R
BE
= 10
)
Collector Cut-off
Current
V
CE
= V
CEV
V
CE
= V
CEV
V
CE
= V
CEV
V
CE
= V
CEV
T
c
= 100
o
C
V
BE
= - 1.5V
V
BE
= - 1.5V T
C
=100
o
C
1
5
mA
mA
I
CEV
1
5
mA
mA
I
EBO
Emitter Cut-off
Current (I
C
= 0)
Collector-Emitter
Sustaining Voltage
Emitter-base
Voltage (I
c
= 0)
V
EB
= 5 V
1
mA
V
CEO(sus)
I
C
= 0.2A
L = 25 mH
125
V
V
EB0
I
E
= 50 mA
7
V
V
CE(sat)
Collector-Emitter
Saturation Voltage
I
C
= 10A
I
C
= 20A
I
C
= 24A
I
C
= 10A
I
C
= 20A
I
C
= 24A
I
C
= 20A
I
C
= 24A
I
C
= 20A
I
C
= 24A
I
B
= 0.5A
I
B
= 2A
I
B
= 3A
I
B
= 0.5A
I
B
= 2A
I
B
= 3A
I
B
= 2A
I
B
= 3A
I
B
= 2A
I
B
= 3A
T
j
= 100
o
C
T
j
= 100
o
C
T
j
= 100
o
C
0.4
0.6
0.7
0.5
0.75
0.9
0.8
0.9
1.2
0.9
1.5
1.8
V
V
V
V
V
V
V
BE(sat)
Base-Emitter
Saturation Voltage
T
j
= 100
o
C
T
j
= 100
o
C
1.25
1.35
1.25
1.45
1.6
1.7
1.7
1.9
V
V
V
V
di
c
/d
t
Rate of Rise of
on-state Collector
Current
V
CC
= 100V I
B1
= 3A
R
C
=0
T
j
= 25
o
C
T
j
= 100
o
C
R
C
=5
T
j
= 25
o
C
T
j
= 100
o
C
R
C
= 5
50
45
100
85
A/
μ
s
A/
μ
s
V
CE(2
μ
s)
Collector-Emitter
Dynamic Voltage
V
CC
= 100V I
B1
= 2A
1.4
2.1
3
4
V
V
V
CE(4
μ
s)
Collector-Emitter
Dynamic Voltage
VCC = 100V I
B1
= 2A
T
j
= 25
o
C
T
j
= 100
o
C
1.1
1.5
2
2.5
V
V
Pulsed: Pulse duration = 300
μ
s, duty cycle = 2 %
BUV50
2/5
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| BUV51 | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:Bipolar NPN Device in a Hermetically sealed TO3 Metal Package |
| BUV52 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 250V V(BR)CEO | 30A I(C) | TO-3 |
| BUV52A | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:FAST SWITCHING POWER TRANSISTOR |
| BUV56 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 850V V(BR)CEO | 8A I(C) | TO-220 |
| BUV60 | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:Bipolar NPN Device |
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