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參數(shù)資料
| 型號(hào)： | BUV21 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | High Current NPN Silicon Transistors(高電流NPN硅晶體管) |
| 中文描述： | 大電流NPN硅晶體管（高電流npn型硅晶體管） |
| 文件頁(yè)數(shù)： | 4/4頁(yè) |
| 文件大小： | 64K |
| 代理商： | BUV21 |
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consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
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. . .
BUV20 / BUV21
4/4
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BUV21/D | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:SWITCHMODE Series NPN Silicon Power Transistor |
| BUV21_06 | 制造商:ONSEMI 制造商全稱(chēng):ON Semiconductor 功能描述:SWITCHMODE Series NPN Silicon Power Transistor |
| BUV21G | 功能描述:兩極晶體管 - BJT 40A 200V 250W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| BUV21N | 制造商:SEME-LAB 制造商全稱(chēng):Seme LAB 功能描述:Bipolar NPN Device in a Hermetically sealed TO3 |
| BUV22 | 功能描述:兩極晶體管 - BJT 40A 250V 250W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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