參數(shù)資料
型號： BUT12AF
廠商： NXP SEMICONDUCTORS
元件分類： 功率晶體管
英文描述： Silicon diffused power transistors
中文描述： 8 A, 450 V, NPN, Si, POWER TRANSISTOR, TO-220
封裝： PLASTIC PACKAGE-3
文件頁數(shù)： 4/12頁
文件大?。?/td> 78K
代理商： BUT12AF
1997 Aug 13
3
Philips Semiconductors
Product specification
Silicon diffused power transistors
BUT12F; BUT12AF
CHARACTERISTICS
T
j
= 25
°
C unless otherwise specified.
Note
1.
Measured with a half-sinewave voltage (curve tracer).
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
CEOsust
collector-emitter sustaining voltage
BUT12F
BUT12AF
collector-emitter saturation voltage
BUT12F
I
C
= 100 mA; I
Boff
= 0; L = 25 mH;
see Figs 5 and 6
400
450
V
V
V
CEsat
I
C
= 6 A; I
B
= 1.2 A; see
Figs 7 and 9
I
C
= 5 A; I
B
= 1 A; see
Figs 7 and 9
1.5
V
BUT12AF
1.5
V
V
BEsat
base-emitter saturation voltage
BUT12F
BUT12AF
collector-emitter cut-off current
I
C
= 6 A; I
B
= 1.2 A; see Fig.7
I
C
= 5 A; I
B
= 1 A; see Fig.7
V
CE
= V
CESMmax
; V
BE
= 0; note 1
V
CE
= V
CESMmax
; V
BE
= 0;
T
j
= 125
°
C; note 1
V
EB
= 9 V; I
C
= 0
V
CE
= 5 V; I
C
= 10 mA; see Fig.10
V
CE
= 5 V; I
C
= 1 A; see Fig.10
1.5
1.5
1
3
V
V
mA
mA
I
CES
I
EBO
h
FE
emitter-base cut-off current
DC current gain
10
10
18
20
10
35
35
mA
Switching times resistive load
(see Fig.12)
t
on
turn-on time
BUT12F
BUT12AF
storage time
BUT12F
BUT12AF
fall time
BUT12F
BUT12AF
I
Con
= 6 A; I
Bon
=
I
Boff
= 1.2 A
I
Con
= 5 A; I
Bon
=
I
Boff
= 1 A
1
1
μ
s
μ
s
t
s
I
Con
= 6 A; I
Bon
=
I
Boff
= 1.2 A
I
Con
= 5 A; I
Bon
=
I
Boff
= 1 A
4
4
μ
s
μ
s
t
f
I
Con
= 6 A; I
Bon
=
I
Boff
= 1.2 A
I
Con
= 5 A; I
Bon
=
I
Boff
= 1 A
0.8
0.8
μ
s
μ
s
Switching times inductive load
(see Fig.14)
t
s
storage time
BUT12F
I
Con
= 6 A; I
Bon
= 1.2 A;
V
CL
= 250 V; T
c
= 100
°
C
I
Con
= 5 A; I
Bon
= 1 A;
V
CL
= 300 V; T
c
= 100
°
C
1.9
2.5
μ
s
BUT12AF
1.9
2.5
μ
s
t
f
fall time
BUT12F
I
Con
= 6 A; I
Bon
= 1.2 A;
V
CL
= 250 V; T
c
= 100
°
C
I
Con
= 5 A; I
Bon
= 1 A;
V
CL
= 300 V; T
c
= 100
°
C
200
300
ns
BUT12AF
200
300
ns
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PDF描述
BUT12AF SILICON DIFFUSED POWER TRANSISTOR(GENERAL DESCRIPTION)
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