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參數(shù)資料
| 型號(hào)： | BUR52 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | High Current NPN Silicon Transistor(高電流NPN硅晶體管) |
| 中文描述： | 大電流NPN硅晶體管（高電流npn型硅晶體管） |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 62K |
| 代理商： | BUR52 |
THERMAL DATA
R
thj-case
Thermal Resistance Junction-case Max
0.5
o
C/W
ELECTRICAL CHARACTERISTICS
(T
case
= 25
o
C unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
CBO
Collector Cut-off
Current (I
E
= 0)
V
CB
= 350 V
V
CB
= 350 V T
case
= 125
o
C
0.2
2
mA
mA
I
CEO
Collector Cut-off
Current (I
B
= 0)
Emitter Cut-off Current
(I
C
= 0)
V
CEO(sus)
Collector-Emitter
Sustaining Voltage
V
EBO
Emitter-base Voltage
(I
C
= 0)
V
CE(sat)
Collector-emitter
Saturation Voltage
V
BE(sat)
Base-emitter
Saturation Voltage
h
FE
DC Current Gain
V
CE
=250 V
1
mA
I
EBO
V
EB
= 7 V
I
C
= 200 mA
0.2
μ
A
250
V
I
E
= 10 mA
10
V
I
C
= 25 A I
B
= 2 A
I
C
= 40 A I
B
= 4 A
I
C
= 25 A I
B
= 2 A
I
C
= 40 A I
B
= 4 A
0.7
1
1.5
V
V
1.5
1.8
2
V
V
I
C
= 5 A V
CE
= 4 V
I
C
= 40 A V
CE
= 4 V
20
15
100
I
s/b
Second Breakdown
Collector Current
Transition-Frequency
V
CE
= 20 V t = 1 s
17.5
A
f
T
I
C
= 1 A V
CE
= 5 V
f = 1 MHz
IC = 40 A I
B1
= 4 A
V
CC
= 100 V
IC = 40 A I
B1
= 4 A
I
B2
= -4 A V
CC
= 100 V
10
16
MHz
t
on
Turn-on Time
0.3
1
μ
s
t
s
t
f
Storage Time
1.2
2
μ
s
μ
s
A
Fall Time
0.2
0.6
Clamped E
s/b
Collector
Current
V
clamp
= 250 V L = 500
μ
H
40
Pulsed: Pulse duration = 300
μ
s, duty cycle 1.5 %
BUR52
2/4
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