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參數(shù)資料
| 型號： | BUR52 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | High Current NPN Silicon Transistor(高電流NPN硅晶體管) |
| 中文描述： | 大電流NPN硅晶體管（高電流npn型硅晶體管） |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 62K |
| 代理商： | BUR52 |
BUR52
HIGH CURRENT NPN SILICON TRANSISTOR
I
SGS-THOMSON PREFERRED SALESTYPE
I
NPN TRANSISTOR
I
MAINTAINS GOOD SWITCHING
PERFORMANCE EVEN WITHOUT
NEGATIVE BASE DRIVE
APPLICATIONS
I
LINEAR AND SWITCHING INDUSTRIAL
EQUIPMENT
DESCRIPTION
The BUR52 is a silicon multiepitaxial planar NPN
transistors in modified Jedec TO-3 metal case,
intented for use in switching and linear
applications in military and industrial equipment.
INTERNAL SCHEMATIC DIAGRAM
June 1997
1
2
TO-3
(version " P ")
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
P
tot
T
stg
T
j
Parameter
Value
350
250
10
60
80
16
350
-65 to 200
200
Unit
V
V
V
A
A
A
W
o
C
o
C
Collector-Base Voltage (I
E
= 0)
Collector-Emitter Voltage (I
B
= 0)
Emitter-Base Voltage (I
C
= 0)
Collector Current
Collector Peak Current (t
p
= 10 ms)
Base Current
Total Dissipation at T
c
≤
25
o
C
Storage Temperature
Max. Operating Junction Temperature
1/4
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