- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄384161 > BUR51 (意法半導(dǎo)體) High Current NPN Silicon Transistor(高電流NPN硅晶體管) PDF資料下載
參數(shù)資料
| 型號(hào)： | BUR51 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | High Current NPN Silicon Transistor(高電流NPN硅晶體管) |
| 中文描述： | 大電流NPN硅晶體管（高電流npn型硅晶體管） |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 64K |
| 代理商： | BUR51 |
THERMAL DATA
R
thj-case
Thermal Resistance Junction-case Max
0.5
o
C/W
ELECTRICAL CHARACTERISTICS
(T
case
= 25
o
C unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
CBO
Collector Cut-off
Current (I
E
= 0)
V
CB
= 300 V
V
CB
= 300 V T
case
= 125
o
C
0.2
2
mA
mA
I
CEO
Collector Cut-off
Current (I
B
= 0)
Emitter Cut-off Current
(I
C
= 0)
V
CEO(sus)
Collector-Emitter
Sustaining Voltage
V
EBO
Emitter-base Voltage
(I
C
= 0)
V
CE(sat)
Collector-emitter
Saturation Voltage
V
BE(sat)
Base-emitter
Saturation Voltage
h
FE
DC Current Gain
V
CE
=200 V
1
mA
I
EBO
V
EB
= 7 V
I
C
= 200 mA
0.2
μ
A
200
V
I
E
= 10 mA
10
V
I
C
= 30 A I
B
= 2 A
I
C
= 50 A I
B
= 5 A
I
C
= 30 A I
B
= 2 A
I
C
= 50 A I
B
= 5 A
0.9
1
1.5
V
V
1.55
1.8
2
V
V
I
C
= 5 A V
CE
= 4 V
I
C
= 50 A V
CE
= 4 V
20
15
100
I
s/b
Second Breakdown
Collector Current
Transition-Frequency
V
CE
= 20 V t = 1 s
17.5
A
f
T
I
C
= 1 A V
CE
= 5 V
f = 1 MHz
IC = 50 A I
B1
= 5 A
V
CC
= 100 V
IC = 50 A I
B1
= 5 A
I
B2
= -5 A V
CC
= 100 V
10
16
MHz
t
on
Turn-on Time
0.35
1
μ
s
t
s
t
f
Storage Time
0.9
2
μ
s
μ
s
A
Fall Time
0.24
0.6
Clamped E
s/b
Collector
Current
V
clamp
= 200 V L = 500
μ
H
50
Pulsed: Pulse duration = 300
μ
s, duty cycle 1.5 %
BUR51
2/4
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BUR52 | High Current NPN Silicon Transistor(高電流NPN硅晶體管) |
| BUV21 | High Current NPN Silicon Transistors(高電流NPN硅晶體管) |
| BUV27 | Medium Power NPN Silicon Transistor(硅平面多外延工藝NPN晶體管) |
| BUV28 | Silicon NPN Switching Transistor(硅開關(guān)NPN晶體管) |
| BUV50 | High Power NPN Silicon Transistor(高功率NPN硅晶體管) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BUR51S | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:Bipolar NPN Device in a Hermetically sealed TO3 |
| BUR52 | 功能描述:兩極晶體管 - BJT DISC BY STM 08/01 TO-3 NPN PWR DARL RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| BUR52_12 | 制造商:COMSET 制造商全稱:Comset Semiconductor 功能描述:HIGH CURRENT NPN SILICON TRANSISTORS |
| BUR52S | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:NPN |
| BUR53D | 制造商:SUNLED 制造商全稱:SunLED Corporation 功能描述:T-1 3/4 (5mm) BLINKING LED LAMP |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。