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參數(shù)資料
| 型號(hào)： | BULD50 |
| 廠商： | Power Innovations International, Inc. |
| 英文描述： | NPN SILICON TRANSISTOR WITH INTEGRATED DIODE |
| 中文描述： | NPN硅晶體管，二極管集成 |
| 文件頁數(shù)： | 1/10頁 |
| 文件大?。?/td> | 231K |
| 代理商： | BULD50 |
BULD50KC, BULD50SL
NPN SILICON TRANSISTOR WITH INTEGRATED DIODE
P R O D U C T I N F O R M A T I O N
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
1
FEBRUARY 1994 - REVISED SEPTEMBER 1997
Copyright 1997, Power Innovations Limited, UK
G
Designed Specifically for High Frequency
Electronic Ballasts
G
Integrated Fast t
rr
Anti-Parallel Diode,
Enhancing Reliability
G
Diode t
rr
Typically 1 μs
G
New Low-Height SL Power Package,
TO220 Pin-Compatible
G
Tightly Controlled Transistor Storage Times
G
Voltage Matched Integrated Transistor and
Diode
G
Characteristics Optimised for Cool Running
G
Diode-Transistor Charge Coupling
Minimised to Enhance Frequency Stability
description
The new BULDxx range of transistors have been
designed specifically for use in High Frequency
Electronic Ballasts (HFEB’s). This range of
switching transistors has tightly controlled
storage times and an integrated fast t
rr
anti-
parallel diode. The revolutionary design ensures
that the diode has both fast forward and reverse
recovery times, achieving the same performance
as a discrete anti-parallel diode plus transistor.
The integrated diode has minimal charge
coupling with the transistor, increasing frequency
stability, especially in lower power circuits where
the circulating currents are low. By design, this
new device offers a voltage matched integrated
transistor and anti-parallel diode.
device symbol
B
C
E
TO-220 PACKAGE
(TOP VIEW)
Pin 2 is in electrical contact with the mounting base.
MDTRACA
1
2
3
1
2
3
B
C
E
SL PACKAGE
(TOP VIEW)
B
C
E
absolute maximum ratings at 25°C
=
(unless otherwise noted)
RATING
SYMBOL
VALUE
UNIT
Collector-emitter voltage (V
BE
= 0)
Collector-base voltage (I
E
= 0)
Collector-emitter voltage (I
B
= 0)
Emitter-base voltage
V
CES
V
CBO
V
CEO
V
EBO
600
600
400
9
V
V
V
V
Continuous collector current
BULD50KC
BULD50SL (see Note 1)
I
C
3.5
A
Peak collector current (see Note 2)
I
CM
6
A
Continuous base current
BULD50KC
BULD50SL (see Note 1)
I
B
1.5
A
Peak base current (see Note 2)
NOTES: 1. This value applies for t
p
=
1 s.
2. This value applies for t
p
=
10 ms, duty cycle
≤
2%.
I
BM
2.5
A
=
≤
25°C case temperature for BULD50KC, and
≤
25°C ambient temperature for BULD50SL
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| BULD50KC | NPN SILICON TRANSISTOR WITH INTEGRATED DIODE |
| BULD50SL | NPN SILICON TRANSISTOR WITH INTEGRATED DIODE |
| BULD85KC | NPN SILICON TRANSISTOR WITH INTEGRATED DIODE |
| BULD85KC | NPN SILICON TRANSISTOR WITH INTEGRATED DIODE |
| BULK128 | HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BULD50KC | 制造商:POINN 制造商全稱:Power Innovations Ltd 功能描述:NPN SILICON TRANSISTOR WITH INTEGRATED DIODE |
| BULD50SL | 制造商:POINN 制造商全稱:Power Innovations Ltd 功能描述:NPN SILICON TRANSISTOR WITH INTEGRATED DIODE |
| BULD741 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:High voltage fast-switching NPN power transistor |
| BULD741-1 | 功能描述:兩極晶體管 - BJT PWR BIP/S.SIGNAL RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| BULD741T4 | 功能描述:兩極晶體管 - BJT PWR BIP/S.SIGNAL RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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