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參數(shù)資料
| 型號： | BUL47A |
| 英文描述： | NPN |
| 中文描述： | 叩 |
| 文件頁數(shù)： | 1/1頁 |
| 文件大小： | 11K |
| 代理商： | BUL47A |
BUL47A
Bipolar NPN Device.
V
CEO
= 300V
I
C
= 40A
All Semelab hermetically sealed products
can be processed in accordance with the
requirements of BS, CECC and JAN,
JANTX, JANTXV and JANS specifications.
Parameter
Test Conditions
Min.
Typ.
Max.
Units
V
CEO
*
300
V
I
C(CONT)
40
A
h
FE
@ 4/25 (V
CE
/ I
C
)
25
-
f
t
20M
Hz
P
D
200
W
* Maximum Working Voltage
This is a shortform datasheet. For a full datasheet please contact
sales@semelab.co.uk
.
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Generated
31-Jul-02
TO3 (TO204AA)
PINOUTS
1 – Base
2 – Emitter
Case - Collector
Bipolar NPN Device in a
Hermetically sealed TO3
Metal Package.
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
Dimensions in mm (inches).
1
2
3
(case)
25.15 (0.99)
26.67 (1.05)
10.67 (0.42)
11.18 (0.44)
3
3
2
3
1
1
3.84 (0.151)
4.09 (0.161)
0
1
7.92 (0.312)
12.70 (0.50)
2
(
m
6.35 (0.25)
9.15 (0.36)
1.52 (0.06)
3.43 (0.135)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BUL47B | NPN |
| BUL49B | TRANSISTOR | BJT | NPN | 250V V(BR)CEO | 40A I(C) | TO-3 |
| BUL48 | TRANSISTOR | BJT | NPN | 400V V(BR)CEO | 7A I(C) | TO-220AB |
| BUL48B | NPN |
| BUL50B | TRANSISTOR | BJT | NPN | 400V V(BR)CEO | 15A I(C) | SOT-93 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BUL47B | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:NPN |
| BUL48 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 400V V(BR)CEO | 7A I(C) | TO-220AB |
| BUL48A | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:Bipolar NPN Device in a Hermetically sealed TO3 Metal Package |
| BUL48B | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:Bipolar NPN Device. |
| BUL49A | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR |
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