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參數(shù)資料
| 型號： | BUL128D-B |
| 廠商： | 意法半導體 |
| 英文描述： | HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR |
| 中文描述： | 高壓快速開關NPN電源晶體管 |
| 文件頁數(shù)： | 2/7頁 |
| 文件大小： | 79K |
| 代理商： | BUL128D-B |
THERMAL DATA
R
thj-case
R
thj-amb
Thermal Resistance Junction-Case
Thermal Resistance Junction-Ambient
Max
Max
1.78
62.5
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS
(T
case
= 25
o
C unlessotherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
CES
Collector Cut-off
Current (V
BE
= -1.5 V)
V
CE
= 700 V
V
CE
= 700 V
T
j
= 125
o
C
100
500
μ
A
μ
A
V
EBO
Emitter-Base Voltage
I
E
= 10 mA
9
V
V
CEO(sus)
Collector-Emitter
Sustaining Voltage
Collector Cut-Off
Current (I
B
= 0)
Collector-Emitter
Saturation Voltage
I
C
= 100 mA
L = 25 mH
400
V
I
CEO
V
CE
= 400 V
250
μ
A
V
CE(sat)
I
C
= 0.5 A
I
C
= 1 A
I
C
= 2.5 A
I
C
= 4 A
I
B
= 0.1 A
I
B
= 0.2 A
I
B
= 0.5 A
I
B
= 1 A
0.5
0.7
1
1.5
V
V
V
V
V
BE(sat)
Base-Emitter
Saturation Voltage
I
C
= 0.5 A
I
C
= 1 A
I
C
= 2.5 A
I
B
= 0.1 A
I
B
= 0.2 A
I
B
= 0.5 A
1.1
1.2
1.3
V
V
V
h
FE
DC Current Gain
I
C
= 10 mA
I
C
= 2 A
Group A
Group B
V
CE
= 5 V
V
CE
= 5 V
10
14
25
28
40
t
s
t
f
RESISTIVE LOAD
Storage Time
Fall Time
V
CC
= 125 V
I
B1
= 0.4 A
T
p
= 30
μ
s
(see fig.2)
I
C
= 2 A
V
BEoff
= -5 V
V
clamp
= 200 V
(see fig.1)
I
C
= 2 A
I
B2
= -0.4 A
1.5
0.2
3
0.4
μ
s
μ
s
t
s
t
f
INDUCTIVE LOAD
Storage Time
Fall Time
I
B1
= 0.4 A
R
BB
= 0
0.6
0.1
1
0.2
μ
s
μ
s
Pulsed: Pulse duration = 300
μ
s, duty cycle 1.5 %
Note : Product is pre-selected inDC current gain (GROUP A and GROUP B).SGS-THOMSON reserves the right to ship either groups
according to production availability. Please contact your nearest SGS THOMSON MICROELECTRONICS sales office for delivery details.
BUL128
2/7
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