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參數資料
| 型號： | BUL128 |
| 廠商： | 意法半導體 |
| 英文描述： | HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR |
| 中文描述： | 高壓快速開關NPN電源晶體管 |
| 文件頁數： | 2/7頁 |
| 文件大?。?/td> | 79K |
| 代理商： | BUL128 |
THERMAL DATA
R
thj-case
R
thj-amb
Thermal Resistance Junction-Case
Thermal Resistance Junction-Ambient
Max
Max
1.78
62.5
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS
(T
case
= 25
o
C unlessotherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
CES
Collector Cut-off
Current (V
BE
= -1.5 V)
V
CE
= 700 V
V
CE
= 700 V
T
j
= 125
o
C
100
500
μ
A
μ
A
V
EBO
Emitter-Base Voltage
I
E
= 10 mA
9
V
V
CEO(sus)
Collector-Emitter
Sustaining Voltage
Collector Cut-Off
Current (I
B
= 0)
Collector-Emitter
Saturation Voltage
I
C
= 100 mA
L = 25 mH
400
V
I
CEO
V
CE
= 400 V
250
μ
A
V
CE(sat)
I
C
= 0.5 A
I
C
= 1 A
I
C
= 2.5 A
I
C
= 4 A
I
B
= 0.1 A
I
B
= 0.2 A
I
B
= 0.5 A
I
B
= 1 A
0.5
0.7
1
1.5
V
V
V
V
V
BE(sat)
Base-Emitter
Saturation Voltage
I
C
= 0.5 A
I
C
= 1 A
I
C
= 2.5 A
I
B
= 0.1 A
I
B
= 0.2 A
I
B
= 0.5 A
1.1
1.2
1.3
V
V
V
h
FE
DC Current Gain
I
C
= 10 mA
I
C
= 2 A
Group A
Group B
V
CE
= 5 V
V
CE
= 5 V
10
14
25
28
40
t
s
t
f
RESISTIVE LOAD
Storage Time
Fall Time
V
CC
= 125 V
I
B1
= 0.4 A
T
p
= 30
μ
s
(see fig.2)
I
C
= 2 A
V
BEoff
= -5 V
V
clamp
= 200 V
(see fig.1)
I
C
= 2 A
I
B2
= -0.4 A
1.5
0.2
3
0.4
μ
s
μ
s
t
s
t
f
INDUCTIVE LOAD
Storage Time
Fall Time
I
B1
= 0.4 A
R
BB
= 0
0.6
0.1
1
0.2
μ
s
μ
s
Pulsed: Pulse duration = 300
μ
s, duty cycle 1.5 %
Note : Product is pre-selected inDC current gain (GROUP A and GROUP B).SGS-THOMSON reserves the right to ship either groups
according to production availability. Please contact your nearest SGS THOMSON MICROELECTRONICS sales office for delivery details.
BUL128
2/7
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相關代理商/技術參數 |
參數描述 |
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| BUL128_01 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR |
| BUL128D | 制造商:TGS 制造商全稱:Tiger Electronic Co.,Ltd 功能描述:HIGH VOLTAGE FAST-SWITCHINGNPN POWER TRANSISTOR |
| BUL128D/-B | 制造商:STMicroelectronics 功能描述:Bulk |
| BUL128D-A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 400V V(BR)CEO | 4A I(C) | TO-220AB |
| BUL128D-B | 功能描述:TRANS NPN HV FAST 400V TO-220 RoHS:是 類別:分離式半導體產品 >> 晶體管(BJT) - 單路 系列:- 標準包裝:1 系列:- 晶體管類型:NPN 電流 - 集電極 (Ic)（最大）:1A 電壓 - 集電極發(fā)射極擊穿（最大）:30V Ib、Ic條件下的Vce飽和度（最大）:200mV @ 100mA，1A 電流 - 集電極截止（最大）:100nA 在某 Ic、Vce 時的最小直流電流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 頻率 - 轉換:100MHz 安裝類型:表面貼裝 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應商設備封裝:SOT-23-3（TO-236） 包裝:Digi-Reel® 其它名稱:MMBT489LT1GOSDKR |
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