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參數(shù)資料
| 型號： | BUL1203 |
| 廠商： | 意法半導體 |
| 英文描述： | HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR |
| 中文描述： | 高壓快速開關NPN電源晶體管 |
| 文件頁數(shù)： | 7/7頁 |
| 文件大?。?/td> | 209K |
| 代理商： | BUL1203 |
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BUL1203E
7/7
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PDF描述 |
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| BUL1203E | HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR |
| BUL128FP | HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR |
| BUL128 | HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR |
| BUL128D-B | HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR |
| BUL138FP | High Voltage Fast-Switching NPN Power Transistor(高壓快速開關NPN功率晶體管) |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| BUL1203E | 功能描述:兩極晶體管 - BJT N Ch 75V 3.5m 120A Pwr MOSFET RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| BUL1203EFP | 功能描述:兩極晶體管 - BJT PWR BIP/S.SIGNAL RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| BUL128 | 功能描述:兩極晶體管 - BJT NPN Hi-Volt Fast Sw RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| BUL128_01 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR |
| BUL128D | 制造商:TGS 制造商全稱:Tiger Electronic Co.,Ltd 功能描述:HIGH VOLTAGE FAST-SWITCHINGNPN POWER TRANSISTOR |
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