參數(shù)資料
型號: BUL116D
廠商: 意法半導(dǎo)體
英文描述: MEDIUM VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
中文描述: 中壓快速開關(guān)NPN電源晶體管
文件頁數(shù): 6/6頁
文件大?。?/td> 218K
代理商: BUL116D
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BUL116D
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相關(guān)PDF資料
PDF描述
BUL118 High Voltage Fast-Switching NPN Power Transistor(高壓快速開關(guān)NPN功率晶體管)
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BUL38D High Voltage Fast-Switching NPN Power Transistor(高壓快速開關(guān)NPN功率晶體管)
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
BUL118 制造商:STMicroelectronics 功能描述:
BUL118D 制造商:未知廠家 制造商全稱:未知廠家 功能描述:BJT
BUL1203 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
BUL1203E 功能描述:兩極晶體管 - BJT N Ch 75V 3.5m 120A Pwr MOSFET RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
BUL1203EFP 功能描述:兩極晶體管 - BJT PWR BIP/S.SIGNAL RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2