參數(shù)資料
型號(hào)： BUK9728-55A
廠商： NXP SEMICONDUCTORS
元件分類： JFETs
英文描述： N-channel TrenchMOS standard level FET
中文描述： 22 A, 55 V, 0.03 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： PLASTIC, TO-220F, 3 PIN
文件頁數(shù)： 2/12頁
文件大?。?/td> 121K
代理商： BUK9728-55A
Philips Semiconductors
BUK9728-55A
N-channel TrenchMOS logic level FET
Product data
Rev. 02 — 10 June 2004
2 of 12
9397 750 13326
Koninklijke Philips Electronics N.V. 2004. All rights reserved.
5.
Quick reference data
6.
Limiting values
[1]
I
DM
is limited by chip, not package.
Table 2:
Symbol Parameter
V
DS
drain-source voltage (DC)
I
D
drain current (DC)
P
tot
total power dissipation
T
j
junction temperature
R
DSon
drain-source on-state resistance
Quick reference data
Conditions
Typ
-
-
-
-
23
-
Max
55
22
26
150
28
30
Unit
V
A
W
°
C
m
m
T
mb
= 25
°
C; V
GS
= 5 V
T
mb
= 25
°
C
T
j
= 25
°
C; V
GS
= 5 V; I
D
= 15 A
T
j
= 25
°
C; V
GS
= 4.5 V; I
D
= 15 A
Table 3:
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
V
DS
drain-source voltage (DC)
V
DGR
drain-gate voltage (DC)
V
GS
gate-source voltage (DC)
V
GSM
non-repetitive gate-source voltage
I
D
drain current (DC)
Limiting values
Conditions
Min
-
-
-
-
-
Max
55
55
±
10
±
15
22
Unit
V
V
V
V
A
R
GS
= 20 k
t
p
≤
50
μ
s
T
mb
= 25
°
C; V
GS
= 5 V;
Figure 2
and
3
T
mb
= 100
°
C; V
GS
= 5 V;
Figure 2
T
mb
= 25
°
C; pulsed; t
p
≤
10
μ
s;
Figure 3
T
mb
= 25
°
C;
Figure 1
-
16
90
A
A
I
DM
peak drain current
[1]
-
P
tot
T
stg
T
j
Source-drain diode
I
DR
reverse drain current (DC)
I
DRM
peak reverse drain current
Avalanche ruggedness
E
DS(AL)S
non-repetitive drain-source avalanche
energy
total power dissipation
storage temperature
operating junction temperature
-
55
55
26
+150
+150
W
°
C
°
C
T
mb
= 25
°
C
T
mb
= 25
°
C; pulsed; t
p
≤
10
μ
s
-
-
22
90
A
A
unclamped inductive load; I
D
= 22 A;
V
DS
≤
55 V; V
GS
= 5 V; R
GS
= 50
;
starting T
j
= 25
°
C
-
180
mJ
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