參數資料
型號： BUK9728-55A
廠商： NXP SEMICONDUCTORS
元件分類： JFETs
英文描述： N-channel TrenchMOS standard level FET
中文描述： 22 A, 55 V, 0.03 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： PLASTIC, TO-220F, 3 PIN
文件頁數： 7/12頁
文件大小： 121K
代理商： BUK9728-55A
Philips Semiconductors
BUK9728-55A
N-channel TrenchMOS logic level FET
Product data
Rev. 02 — 10 June 2004
7 of 12
9397 750 13326
Koninklijke Philips Electronics N.V. 2004. All rights reserved.
I
D
= 1 mA; V
DS
= V
GS
Fig 9.
Gate-source threshold voltage as a function of
junction temperature.
T
j
= 25
°
C; V
DS
= V
GS
Fig 10. Sub-threshold drain current as a function of
gate-source voltage.
T
j
= 25
°
C; V
DS
= 25 V
Fig 11. Forward transconductance as a function of
drain current; typical values.
V
GS
= 0 V; f = 1 MHz
Fig 12. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values.
03aa33
0
0.5
1
1.5
2
2.5
-60
0
60
120
180
T
j
(
°
C)
V
GS(th)
(V)
max
typ
min
03aa36
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
I
D
(A)
0
1
2
3
V
GS
(V)
max
typ
min
03na85
0
5
10
15
20
25
30
35
0
20
40
60
80
ID (A)
gfs
(S)
03na88
0
500
1000
1500
2000
2500
3000
3500
10-2
10-1
1
10
102
VDS (V)
C (pF)
Ciss
Coss
Crss
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參數描述
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