參數(shù)資料
型號(hào): BUK7508-55
廠商: NXP SEMICONDUCTORS
元件分類: JFETs
英文描述: TrenchMOS transistor Standard level FET
中文描述: 75 A, 55 V, 0.008 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝: PLASTIC, TO-220AB, 3 PIN
文件頁(yè)數(shù): 5/8頁(yè)
文件大?。?/td> 51K
代理商: BUK7508-55
Philips Semiconductors
Product specification
TrenchMOS
transistor
Standard level FET
BUK7508-55
Fig.11. Sub-threshold drain current.
I
D
= f(V
GS)
; conditions: T
j
= 25 C; V
DS
= V
GS
Fig.12. Typical capacitances, C
, C
, C
.
C = f(V
DS
); conditions: V
GS
= 0 V; f = 1 MHz
Fig.13. Typical turn-on gate-charge characteristics.
V
GS
= f(Q
G
); conditions: I
D
= 50 A; parameter V
DS
Fig.14. Typical reverse diode current.
I
F
= f(V
SDS
); conditions: V
GS
= 0 V; parameter T
j
Fig.15. Normalised avalanche energy rating.
W
DSS
% = f(T
mb
); conditions: I
D
= 75 A
Fig.16. Avalanche energy test circuit.
W
DSS
=
0.5
LI
D
0
1
2
3
4
5
1E-06
1E-05
1E-04
1E-03
1E-02
1E-01
Sub-Threshold Conduction
typ
2%
98%
0
0.2
0.4
0.6
0.8
1
1.2
0
20
40
60
80
100
Tj/C =
175
25
IF/A
VSDS/V
0.01
0.1
1
10
100
0
1
2
3
4
5
6
7
T
Ciss
Coss
Crss
VDS/V
20
40
60
80
100
Tmb / C
120
140
160
180
120
110
100
90
80
70
60
50
40
30
20
10
0
WDSS%
0
10
20
30
40
50
QG/nC
60
70
80
90
100
0
2
4
6
8
10
12
VDS = 14V
VDS = 44V
VGS/V
BUK7508-55
L
T.U.T.
VDD
RGS
R 01
shunt
VDS
-ID/100
+
-
VGS
0
2
BV
DSS
/(
BV
DSS
V
DD
)
February 1997
5
Rev 1.000
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