參數(shù)資料
型號: BUK7505-30A
廠商: NXP SEMICONDUCTORS
元件分類: JFETs
英文描述: TrenchMOS transistor Standard level FET
中文描述: 75 A, 30 V, 0.005 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝: PLASTIC, TO-220AB, 3 PIN
文件頁數(shù): 4/8頁
文件大?。?/td> 50K
代理商: BUK7505-30A
Philips Semiconductors
Product specification
TrenchMOS
transistor
Standard level FET
BUK7505-30A
Fig.5. Typical output characteristics, T
j
= 25 C
I
D
= f(V
DS
); parameter V
GS
Fig.6. Typical on-state resistance, T
j
= 25 C
R
DS(ON)
= f(I
D
); parameter V
GS
Fig.7. Typical on-state resistance, T
= 25 C
R
DS(ON)
= f(V
GS
); conditions I
D
= 25 A;
Fig.8. Typical transfer characteristics.
I
D
= f(V
GS
); conditions: V
DS
= 25 V; parameter T
j
Fig.9. Typical transconductance, T
= 25 C
g
fs
= f(I
D
); conditions: V
DS
= 25 V
Fig.10. Normalised drain-source on-state resistance.
a = R
DS(ON)
/R
DS(ON)25 C
= f(T
j
); I
D
= 25 A; V
GS
= 5 V
0
2
4
6
8
10
0
100
200
300
400
ID/A
VDS/V
4.5
5.0
5.5
6.0
6.5
7.0
7.5
8.0
8.5
9.0
9.5
10.0
20.0
14.0
12.0
VGS/V =
0
1
2
3
4
5
6
7
0
20
40
60
80
100
ID/A
VGS/V
Tj/C =
175
25
0
20
40
60
80
100
3
4
5
6
7
8
9
10
11
RDS(ON)/mOhm
VGS/V =
ID/A
5.5
6.0
6.5
7.0
8.0
10.0
0
20
40
60
80
100
0
10
20
30
40
50
60
70
80
90
gfs/S
ID/A
5
10
15
20
3
3.5
4
4.5
5
5.5
6
6.5
7
7.5RDS(ON)/mOhm
VGS/V
0
0
100
200
0.5
1
1.5
2
30V TrenchMOS
Tj / C
a
150
50
-50
September 1999
4
Rev 1.100
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