參數(shù)資料
型號： BUK6E3R2-55C
廠商： NXP SEMICONDUCTORS
元件分類： 功率晶體管
英文描述： N-channel TrenchMOS intermediate level FET
中文描述： 120 A, 55 V, 0.0048 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA
封裝： PLASTIC, TO-262, I2PAK-3
文件頁數(shù)： 7/14頁
文件大?。?/td> 181K
代理商： BUK6E3R2-55C
BUK6E3R2-55C
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 01 — 6 September 2010
7 of 14
NXP Semiconductors
BUK6E3R2-55C
N-channel TrenchMOS intermediate level FET
Source-drain diode
V
SD
source-drain voltage
I
S
= 25 A; V
GS
= 0 V; T
j
= 25 °C;
see
Figure 16
I
S
= 20 A; dI
S
/dt = -100 A/μs; V
GS
= 0 V;
V
DS
= 25 V
-
0.85
1.2
V
t
rr
Q
r
reverse recovery time
recovered charge
-
-
67
176
-
-
ns
nC
Table 6.
Symbol
Characteristics
…continued
Parameter
Conditions
Min
Typ
Max
Unit
Fig 5.
Transfer characteristics: drain current as a
function of gate-source voltage; typical values
Fig 6.
Output characteristics: drain current as a
function of drain-source voltage; typical values
Fig 7.
Forward transconductance as a function of
drain current; typical values
Fig 8.
Drain-source on-state resistance as a function
of gate-source voltage; typical values
003aae201
0
25
50
75
100
0
2
4
6
V
GS
(V)
I
D
(A)
T
j
= 25
°
C
T
j
= 175
°
C
003aae200
0
20
40
60
80
100
I
D
(A)
0
0.5
1
1.5
2
V
DS
(V)
4
3.4
3.2
10
5
V
GS
(V) = 3.6
3.8
003aae199
0
50
100
150
200
250
g
fs
(S)
0
20
40
60
80
100
I
D
(A)
003aae290
0
2
4
6
8
10
0
5
10
15
20
V
GS
(V)
R
DSon
(m
Ω
)
相關(guān)PDF資料
PDF描述
BUK6E3R4-40C N-channel TrenchMOS intermediate level FET
BUK6E4R0-75C N-channel TrenchMOS FET
BUK7105-40ATE N-channel TrenchPLUS standard level FET
BUK7107-40ATC N-channel TrenchPLUS standard level FET
BUK7108-40AIE N-channel TrenchPLUS standard level FET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
BUK6E3R2-55C,127 功能描述:MOSFET N-CHAN 55V 120A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
BUK6E3R4-40C 制造商:NXP Semiconductors 功能描述:MOSFETN CH40V100ASOT226 制造商:NXP Semiconductors 功能描述:MOSFET,N CH,40V,100A,SOT226 制造商:NXP Semiconductors 功能描述:MOSFET,N CH,40V,100A,SOT226, Transistor Polarity:N Channel, Continuous Drain Cur
BUK6E3R4-40C,127 功能描述:MOSFET N-CHAN 40V 100A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
BUK6E3R4-40C127 制造商:NXP 功能描述: 制造商:NXP Semiconductors 功能描述:
BUK6E4R0-75C 制造商:NXP Semiconductors 功能描述:MOSFETN CH75V120ASOT226 制造商:NXP Semiconductors 功能描述:MOSFET,N CH,75V,120A,SOT226 制造商:NXP Semiconductors 功能描述:MOSFET,N CH,75V,120A,SOT226, Transistor Polarity:N Channel, Continuous Drain Current Id:120A, Drain Source Voltage Vds:120V, On Resistance Rds(on):3600ohm, Rds(on) Test Voltage Vgs:10V, Threshold Voltage Vgs Typ:2.3V, Power , RoHS Compliant: Yes
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺，查看報價

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺，查看報價

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*