參數(shù)資料
型號(hào): BUK663R7-75C
廠商: NXP SEMICONDUCTORS
元件分類: 功率晶體管
英文描述: N-channel TrenchMOS FET
中文描述: 120 A, 75 V, 0.0058 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: PLASTIC, D2PAK-3
文件頁(yè)數(shù): 11/14頁(yè)
文件大?。?/td> 360K
代理商: BUK663R7-75C
BUK663R7-75C
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 2 — 15 September 2010
11 of 14
NXP Semiconductors
BUK663R7-75C
N-channel TrenchMOS FET
8.
Revision history
Table 7.
Document ID
BUK663R7-75C v.2
Modifications:
BUK663R7-75C v.1
Revision history
Release date
20100915
Status changed from objective to product data sheet.
20100706
Objective data sheet
Data sheet status
Product data sheet
Change notice
-
Supersedes
BUK663R7-75C v.1
-
-
相關(guān)PDF資料
PDF描述
BUK664R4-55C N-channel TrenchMOS intermediate level FET
BUK664R6-40C N-channel TrenchMOS intermediate level FET
BUK664R8-75C N-channel TrenchMOS FET
BUK6C1R5-40C N-channel TrenchMOS intermediate level FET
BUK6E2R0-30C N-channel TrenchMOS intermediate level FET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
BUK663R7-75C,118 功能描述:MOSFET N-CHAN 75V 120A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
BUK664R4-55C 制造商:NXP Semiconductors 功能描述:Cut Tape 制造商:NXP Semiconductors 功能描述:MOSFETN CH55V97ASOT404 制造商:NXP Semiconductors 功能描述:MOSFET,N CH,55V,97A,SOT404 制造商:NXP Semiconductors 功能描述:Trans MOSFET N-CH 55V 100A 3-Pin(2+Tab) D2PAK
BUK664R4-55C,118 功能描述:MOSFET N-CHAN 55V 100A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
BUK664R6-40C 制造商:NXP Semiconductors 功能描述:Cut Tape 制造商:NXP Semiconductors 功能描述:MOSFETN CH40V80ASOT404 制造商:NXP Semiconductors 功能描述:MOSFET,N CH,40V,80A,SOT404 制造商:NXP Semiconductors 功能描述:Trans MOSFET N-CH 40V 100A 3-Pin(2+Tab) D2PAK
BUK664R6-40C,118 功能描述:MOSFET N-CHANNEL TRENCHMOS INTERMEDIATE LVL FET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube