參數(shù)資料
型號: BUK662R5-30C
廠商: NXP SEMICONDUCTORS
元件分類: 功率晶體管
英文描述: N-channel TrenchMOS intermediate level FET
中文描述: 100 A, 30 V, 0.0048 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: PLASTIC, D2PAK-3
文件頁數(shù): 8/14頁
文件大小: 353K
代理商: BUK662R5-30C
BUK662R5-30C
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 2 — 14 October 2010
8 of 14
NXP Semiconductors
BUK662R5-30C
N-channel TrenchMOS intermediate level FET
Fig 9.
Sub-threshold drain current as a function of
gate-source voltage
Fig 10. Gate-source threshold voltage as a function of
junction temperature
Fig 11. Drain-source on-state resistance as a function
of drain current; typical values
Fig 12. Normalized drain-source on-state resistance
factor as a function of junction temperature
003aad806
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
I
D
(A)
0
1
2
3
4
V
GS
(V)
max
typ
min
003aae542
0
1
2
3
4
-60
0
60
120
180
T
j
(
°
C)
V
GS(th)
(V)
max @1mA
typ @1mA
min @2.5mA
003aae782
0
2
4
6
8
10
0
60
120
180
240
I
D
(A)
R
DSon
(m
Ω
)
10.0
6.0
4.5
3.8
V
GS
(V) =
5.0
4.0
03aa27
0
0.5
1
1.5
2
60
0
60
120
180
T
j
(
°
C)
a
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