參數(shù)資料
型號： BUK662R5-30C
廠商： NXP SEMICONDUCTORS
元件分類： 功率晶體管
英文描述： N-channel TrenchMOS intermediate level FET
中文描述： 100 A, 30 V, 0.0048 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： PLASTIC, D2PAK-3
文件頁數(shù)： 3/14頁
文件大?。?/td> 353K
代理商： BUK662R5-30C
BUK662R5-30C
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 2 — 14 October 2010
3 of 14
NXP Semiconductors
BUK662R5-30C
N-channel TrenchMOS intermediate level FET
4.
Limiting values
[1]
-16V accumulated duration not to exceed 168 hrs.
[2]
Accumulated pulse duration not to exceed 5 mins.
[3]
Continuous current is limited by package.
[4]
Single-pulse avalanche rating limited by maximum junction temperature of 175 °C.
[5]
Repetitive avalanche rating limited by an average junction temperature of 170 °C.
[6]
Refer to application note AN10273 for further information.
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
Limiting values
Symbol
V
DS
V
GS
Parameter
drain-source voltage
gate-source voltage
Conditions
T
j
≥
25 °C; T
j
≤
175 °C
DC
Pulsed
T
mb
= 25 °C; V
GS
= 10 V; see
Figure 1
T
mb
= 100 °C; V
GS
= 10 V; see
Figure 1
T
mb
= 25 °C; t
p
≤
10 μs; pulsed;
see
Figure 3
T
mb
= 25 °C; see
Figure 2
Min
-
-16
-20
-
-
-
Max
30
16
20
100
100
783
Unit
V
V
V
A
A
A
[1]
[2]
I
D
drain current
[3]
[3]
I
DM
peak drain current
P
tot
T
stg
T
j
Source-drain diode
I
S
I
SM
Avalanche ruggedness
E
DS(AL)S
total power dissipation
storage temperature
junction temperature
-
-55
-55
204
175
175
W
°C
°C
source current
peak source current
T
mb
= 25 °C
t
p
≤
10 μs; pulsed; T
mb
= 25 °C
[3]
-
-
100
783
A
A
non-repetitive drain-source
avalanche energy
repetitive drain-source
avalanche energy
I
D
= 100 A; V
sup
≤
30 V; R
GS
= 50
;
V
GS
= 10 V; T
j(init)
= 25 °C; unclamped
-
501
mJ
E
DS(AL)R
[4][5][6]
-
-
J
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BUK663R2-40C 制造商:NXP Semiconductors 功能描述:Cut Tape 制造商:NXP Semiconductors 功能描述:MOSFETN CH40V100ASOT404 制造商:NXP Semiconductors 功能描述:MOSFET,N CH,40V,100A,SOT404 制造商:NXP Semiconductors 功能描述:MOSFET,N CH,40V,100A,SOT404; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:40V; On Resistance Rds(on):2.7mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.3V; No. of Pins:3 ;RoHS Compliant: Yes 制造商:NXP Semiconductors 功能描述:Trans MOSFET N-CH 40V 100A 3-Pin(2+Tab) D2PAK
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