參數(shù)資料
型號： BUK6607-55C
廠商： NXP SEMICONDUCTORS
元件分類： 功率晶體管
英文描述： N-channel TrenchMOS logic and standard level FET
中文描述： 100 A, 55 V, 0.0102 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： PLASTIC, D2PAK-3
文件頁數(shù)： 6/14頁
文件大?。?/td> 355K
代理商： BUK6607-55C
BUK6607-55C
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 1 — 14 October 2010
6 of 14
NXP Semiconductors
BUK6607-55C
N-channel TrenchMOS logic and standard level FET
6.
Characteristics
Table 6.
Symbol
Static characteristics
V
(BR)DSS
Characteristics
Parameter
Conditions
Min
Typ
Max
Unit
drain-source
breakdown voltage
I
D
= 250 μA; V
GS
= 0 V; T
j
= 25 °C
I
D
= 250 μA; V
GS
= 0 V; T
j
= -55 °C
I
D
= 1 mA; V
DS
= V
GS
; T
j
= 25 °C;
see
Figure 9
; see
Figure 10
I
D
= 1 mA; V
DS
= V
GS
; T
j
= -55 °C;
see
Figure 10
I
D
= 1 mA; V
DS
= V
GS
; T
j
= 175 °C;
see
Figure 10
V
DS
= 55 V; V
GS
= 0 V; T
j
= 175 °C
V
DS
= 55 V; V
GS
= 0 V; T
j
= 25 °C
V
DS
= 0 V; V
GS
= 20 V; T
j
= 25 °C
V
DS
= 0 V; V
GS
= -20 V; T
j
= 25 °C
V
GS
= 10 V; I
D
= 25 A; T
j
= 25 °C;
see
Figure 11
V
GS
= 5 V; I
D
= 25 A; T
j
= 25 °C;
see
Figure 11
V
GS
= 4.5 V; I
D
= 25 A; T
j
= 25 °C;
see
Figure 11
V
GS
= 10 V; I
D
= 25 A; T
j
= 175 °C;
see
Figure 12
; see
Figure 11
55
50
1.8
-
-
2.3
-
-
2.8
V
V
V
V
GS(th)
gate-source threshold
voltage
-
-
3.3
V
0.8
-
-
V
I
DSS
drain leakage current
-
-
-
-
-
-
0.02
2
2
5.5
500
1
100
100
6.5
μA
μA
nA
nA
m
I
GSS
gate leakage current
R
DSon
drain-source on-state
resistance
-
6.9
8.7
m
-
7.6
10.2
m
-
-
14.3
m
Dynamic characteristics
Q
G(tot)
total gate charge
I
D
= 25 A; V
DS
= 44 V; V
GS
= 5 V;
see
Figure 13
; see
Figure 14
I
D
= 25 A; V
DS
= 44 V; V
GS
= 10 V;
see
Figure 13
; see
Figure 14
-
43
-
nC
-
-
-
-
-
-
82
13.5
19
3870
381
263
-
-
-
5160
457
360
nC
nC
nC
pF
pF
pF
Q
GS
Q
GD
C
iss
C
oss
C
rss
gate-source charge
gate-drain charge
input capacitance
output capacitance
reverse transfer
capacitance
turn-on delay time
rise time
turn-off delay time
fall time
internal drain
inductance
internal source
inductance
V
GS
= 0 V; V
DS
= 25 V; f = 1 MHz;
T
j
= 25 °C; see
Figure 15
t
d(on)
t
r
t
d(off)
t
f
L
D
V
DS
= 45 V; R
L
= 1.8
; V
GS
= 10 V;
R
G(ext)
= 10
-
-
-
-
-
18
44
165
78
3.5
-
-
-
-
-
ns
ns
ns
ns
nH
from upper edge of drain mounting base
to centre of die; T
j
= 25 °C
from source lead to source bond pad;
T
j
= 25 °C
L
S
-
7.5
-
nH
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