參數(shù)資料
型號: BUK6607-55C
廠商: NXP SEMICONDUCTORS
元件分類: 功率晶體管
英文描述: N-channel TrenchMOS logic and standard level FET
中文描述: 100 A, 55 V, 0.0102 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: PLASTIC, D2PAK-3
文件頁數(shù): 2/14頁
文件大?。?/td> 355K
代理商: BUK6607-55C
BUK6607-55C
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 1 — 14 October 2010
2 of 14
NXP Semiconductors
BUK6607-55C
N-channel TrenchMOS logic and standard level FET
[1]
Continuous current is limited by package.
2.
Pinning information
3.
Ordering information
Avalanche ruggedness
E
DS(AL)S
non-repetitive
drain-source
avalanche energy
I
D
= 100 A; V
sup
55 V;
R
GS
= 50
; V
GS
= 10 V;
T
j(init)
= 25 °C; unclamped
-
-
128
mJ
Dynamic characteristics
Q
GD
gate-drain charge
I
D
= 25 A; V
DS
= 44 V;
V
GS
= 10 V; see
Figure 13
;
see
Figure 14
-
19
-
nC
Table 1.
Symbol
Quick reference data
…continued
Parameter
Conditions
Min
Typ
Max
Unit
Table 2.
Pin
1
2
3
mb
Pinning information
Symbol
Description
G
gate
D
drain
S
source
D
mounting base; connected to
drain
Simplified outline
Graphic symbol
SOT404 (D2PAK)
mb
1
3
2
S
D
G
mbb076
Table 3.
Type number
Ordering information
Package
Name
D2PAK
Description
plastic single-ended surface-mounted package (D2PAK);
3 leads (one lead cropped)
Version
SOT404
BUK6607-55C
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