參數(shù)資料
型號(hào): BUK653R7-30C
廠商: NXP SEMICONDUCTORS
元件分類: 功率晶體管
英文描述: N-channel TrenchMOS intermediate level FET
中文描述: 100 A, 30 V, 0.0062 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝: PLASTIC, SC-46, 3 PIN
文件頁數(shù): 5/14頁
文件大小: 368K
代理商: BUK653R7-30C
BUK653R7-30C
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 3 — 13 October 2010
5 of 14
NXP Semiconductors
BUK653R7-30C
N-channel TrenchMOS intermediate level FET
5.
Thermal characteristics
Table 5.
Symbol
R
th(j-mb)
Thermal characteristics
Parameter
thermal resistance from
junction to mounting base
thermal resistance from
junction to ambient
Conditions
see
Figure 4
Min
-
Typ
-
Max
0.95
Unit
K/W
R
th(j-a)
vertical in free air
-
60
-
K/W
Fig 4.
Transient thermal impedance from junction to mounting base as a function of pulse duration
003aae304
single shot
0.2
0.1
0.05
0.02
10
-3
10
-2
10
-1
1
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
1
t
p
(s)
t
p
T
P
t
t
p
T
δ
=
δ
= 0.5
Z
th(j-mb)
(K/W)
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