參數(shù)資料
型號: BUK653R7-30C
廠商: NXP SEMICONDUCTORS
元件分類: 功率晶體管
英文描述: N-channel TrenchMOS intermediate level FET
中文描述: 100 A, 30 V, 0.0062 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝: PLASTIC, SC-46, 3 PIN
文件頁數(shù): 2/14頁
文件大?。?/td> 368K
代理商: BUK653R7-30C
BUK653R7-30C
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 3 — 13 October 2010
2 of 14
NXP Semiconductors
BUK653R7-30C
N-channel TrenchMOS intermediate level FET
[1]
Continuous current is limited by package.
2.
Pinning information
3.
Ordering information
Avalanche ruggedness
E
DS(AL)S
non-repetitive
drain-source
avalanche energy
I
D
= 100 A; V
sup
30 V;
R
GS
= 50
; V
GS
= 10 V;
T
j(init)
= 25 °C; unclamped
-
-
242
mJ
Dynamic characteristics
Q
GD
gate-drain charge
I
D
= 25 A; V
DS
= 24 V;
V
GS
= 10 V; see
Figure 13
;
see
Figure 14
-
20
-
nC
Table 1.
Symbol
Quick reference data
…continued
Parameter
Conditions
Min
Typ
Max
Unit
Table 2.
Pin
1
2
3
mb
Pinning information
Symbol
Description
G
gate
D
drain
S
source
D
mounting base; connected to
drain
Simplified outline
Graphic symbol
SOT78A (TO-220AB)
1 2
mb
3
S
D
G
mbb076
Table 3.
Type number
Ordering information
Package
Name
TO-220AB
Description
plastic single-ended package; heatsink mounted;
1 mounting hole; 3-lead TO-220AB
Version
SOT78A
BUK653R7-30C
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BUK654R6-55C 制造商:NXP Semiconductors 功能描述:MOSFETN CH55V92ASOT78 制造商:NXP Semiconductors 功能描述:MOSFET,N CH,55V,92A,SOT78 制造商:NXP Semiconductors 功能描述:MOSFET,N CH,55V,92A,SOT78; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:55V; On Resistance Rds(on):4.6mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.3V; No. of Pins:3 ;RoHS Compliant: Yes
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