參數(shù)資料
型號(hào)： BUK6510-75C
廠商： NXP SEMICONDUCTORS
元件分類： 功率晶體管
英文描述： N-channel TrenchMOS FET
中文描述： 77 A, 75 V, 0.013 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝： PLASTIC, SC-46, 3 PIN
文件頁(yè)數(shù)： 7/16頁(yè)
文件大小： 213K
代理商： BUK6510-75C
BUK6510-75C
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 02 — 13 December 2010
7 of 16
NXP Semiconductors
BUK6510-75C
N-channel TrenchMOS FET
Q
GS
Q
GD
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
L
D
gate-source charge
gate-drain charge
input capacitance
output capacitance
reverse transfer capacitance
turn-on delay time
rise time
turn-off delay time
fall time
internal drain inductance
I
D
= 25 A; V
DS
= 60 V; V
GS
= 10 V;
see
Figure 16
; see
Figure 17
-
-
-
-
-
-
-
-
-
-
11
30
3938
310
206
18
40
165
80
4.5
-
-
5251
372
282
-
-
-
-
-
nC
nC
pF
pF
pF
ns
ns
ns
ns
nH
V
GS
= 0 V; V
DS
= 25 V; f = 1 MHz;
T
j
= 25 °C; see
Figure 20
V
DS
= 55 V; R
L
= 2.2
; V
GS
= 10 V;
R
G(ext)
= 10
from drain lead 6 mm from package
to centre of die ; T
j
= 25 °C
from source lead to source bond
pad ; T
j
= 25 °C
L
S
internal source inductance
-
7.5
-
nH
Source-drain diode
V
SD
source-drain voltage
I
S
= 25 A; V
GS
= 0 V; T
j
= 25 °C;
see
Figure 19
I
S
= 20 A; dI
S
/dt = -100 A/μs;
V
GS
= 0 V; V
DS
= 25 V
-
0.8
1.2
V
t
rr
Q
r
reverse recovery time
recovered charge
-
-
50.5
105
-
-
ns
nC
Table 6.
Symbol
Characteristics
…continued
Parameter
Conditions
Min
Typ
Max
Unit
Fig 5.
Output characteristics: drain current as a
function of drain-source voltage; typical values
Fig 6.
Drain-source on-state resistance as a function
of gate-source voltage; typical values.
003aae409
0
25
50
75
100
125
150
I
D
(A)
0
1
2
3
4
V
DS
(V)
3.3
3.2
V
GS
(V) =10
3.4
3.6
3.8
4.0
4.5
5.0
6.0
003aae415
0
10
20
30
40
50
0
4
8
12
16
20
V
GS
(V)
R
DSon
(m
Ω
)
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
BUK6510-75C,127 功能描述:MOSFET N-CHAN 75V 77A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
BUK652R0-30C 制造商:NXP Semiconductors 功能描述:MOSFETN CH30V120ASOT78 制造商:NXP Semiconductors 功能描述:MOSFET,N CH,30V,120A,SOT78 制造商:NXP Semiconductors 功能描述:MOSFET,N CH,30V,120A,SOT78; Transistor Polarity:N Channel; Continuous Drain Current Id:120A; Drain Source Voltage Vds:30V; On Resistance Rds(on):1.9mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.3V; No. of Pins:3 ;RoHS Compliant: Yes
BUK652R0-30C,127 功能描述:MOSFET N-CHAN 30V 120A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
BUK652R1-30C 制造商:NXP Semiconductors 功能描述:MOSFETN CH30V120ASOT78 制造商:NXP Semiconductors 功能描述:MOSFET,N CH,30V,120A,SOT78
BUK652R1-30C,127 功能描述:MOSFET N-CHANNEL TRENCHMOS INTERMEDIATE LVL FET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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