參數(shù)資料
型號(hào)： BUK626R2-40C
廠商： NXP SEMICONDUCTORS
元件分類： 功率晶體管
英文描述： N-channel TrenchMOS intermediate level FET
中文描述： 90 A, 40 V, 0.0107 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
封裝： PLASTIC, SC-63, DPAK-3
文件頁數(shù)： 3/14頁
文件大小： 174K
代理商： BUK626R2-40C
BUK626R2-40C
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 1 — 12 July 2011
3 of 14
NXP Semiconductors
BUK626R2-40C
N-channel TrenchMOS intermediate level FET
4.
Limiting values
[1]
-16V accumulated duration not to exceed 168 hrs.
[2]
Accumulated pulse duration not to exceed 5mins.
[3]
Continuous current is limited by package.
[4]
Single-pulse avalanche rating limited by maximum junction temperature of 175 °C.
[5]
Repetitive avalanche rating limited by an average junction temperature of 170 °C.
[6]
Refer to application note AN10273 for further information.
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
Limiting values
Symbol
V
DS
V
GS
Parameter
drain-source voltage
gate-source voltage
Conditions
T
j
≥
25 °C; T
j
≤
175 °C
DC
Pulsed
T
mb
= 25 °C; V
GS
= 10 V; see
Figure 1
T
mb
= 100 °C; V
GS
= 10 V; see
Figure 1
T
mb
= 25 °C; pulsed; t
p
≤
10 μs;
see
Figure 3
T
mb
= 25 °C; see
Figure 2
Min
-
-16
-20
-
-
-
Max
40
16
20
90
70
397
Unit
V
V
V
A
A
A
[1]
[2]
I
D
drain current
[3]
I
DM
peak drain current
P
tot
T
stg
T
j
Source-drain diode
I
S
I
SM
Avalanche ruggedness
E
DS(AL)S
total power dissipation
storage temperature
junction temperature
-
-55
-55
128
175
175
W
°C
°C
source current
peak source current
T
mb
= 25 °C
pulsed; t
p
≤
10 μs; T
mb
= 25 °C
[3]
-
-
90
397
A
A
non-repetitive drain-source
avalanche energy
repetitive drain-source
avalanche energy
I
D
= 90 A; V
sup
≤
40 V; R
GS
= 50
;
V
GS
= 10 V; T
j(init)
= 25 °C; unclamped
-
113
mJ
E
DS(AL)R
[4][5][6]
-
-
J
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參數(shù)描述
BUK626R2-40C,118 功能描述:MOSFET N-CH 40V 90A DPAK RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:* 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時(shí)的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件
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