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參數資料
| 型號： | BUK6228-55C |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | N-channel TrenchMOS intermediate level FET |
| 中文描述： | 31 A, 55 V, 0.044 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 |
| 封裝： | PLASTIC, SC-63, DPAK-3 |
| 文件頁數： | 3/14頁 |
| 文件大?。?/td> | 196K |
| 代理商： | BUK6228-55C |
BUK6228-55C
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 01 — 4 October 2010
3 of 14
NXP Semiconductors
BUK6228-55C
N-channel TrenchMOS intermediate level FET
4.
Limiting values
[1]
-16V accumulated duration not to exceed 168 hrs
[2]
Accumulated pulse duration not to exceed 5 mins.
[3]
Single-pulse avalanche rating limited by maximum junction temperature of 175 °C.
[4]
Repetitive avalanche rating limited by an average junction temperature of 170 °C.
[5]
Refer to application note AN10273 for further information.
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
Limiting values
Symbol
V
DS
V
GS
Parameter
drain-source voltage
gate-source voltage
Conditions
T
j
≥
25 °C; T
j
≤
175 °C
DC
Pulsed
T
mb
= 25 °C; V
GS
= 10 V; see
Figure 1
T
mb
= 100 °C; V
GS
= 10 V; see
Figure 1
T
mb
= 25 °C; t
p
≤
10 μs; pulsed;
see
Figure 3
T
mb
= 25 °C; see
Figure 2
Min
-
-16
-20
-
-
-
Max
55
16
20
31
22
122
Unit
V
V
V
A
A
A
[1]
[2]
I
D
drain current
I
DM
peak drain current
P
tot
T
stg
T
j
Source-drain diode
I
S
I
SM
Avalanche ruggedness
E
DS(AL)S
total power dissipation
storage temperature
junction temperature
-
-55
-55
60
175
175
W
°C
°C
source current
peak source current
T
mb
= 25 °C
t
p
≤
10 μs; pulsed; T
mb
= 25 °C
-
-
31
122
A
A
non-repetitive drain-source
avalanche energy
repetitive drain-source
avalanche energy
I
D
= 31 A; V
sup
≤
55 V; R
GS
= 50
;
V
GS
= 10 V; T
j(init)
= 25 °C; unclamped
-
25
mJ
E
DS(AL)R
[3][4][5]
-
-
J
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