參數(shù)資料
型號(hào): BUK6217-55C
廠商: NXP SEMICONDUCTORS
元件分類: 功率晶體管
英文描述: N-channel TrenchMOS intermediate level FET
中文描述: 44 A, 55 V, 0.0285 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
封裝: PLASTIC, SC-63, DPAK-3
文件頁(yè)數(shù): 9/14頁(yè)
文件大?。?/td> 201K
代理商: BUK6217-55C
BUK6217-55C
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 02 — 4 October 2010
9 of 14
NXP Semiconductors
BUK6217-55C
N-channel TrenchMOS intermediate level FET
Fig 13. Gate charge waveform definitions
Fig 14. Gate-source voltage as a function of gate
charge; typical values
Fig 15. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
Fig 16. Source (diode forward) current as a function of
source-drain (diode forward) voltage; typical
values
003aaa508
V
GS
V
GS(th)
Q
GS1
Q
GS2
Q
GD
V
DS
Q
G(tot)
I
D
Q
GS
V
GS(pl)
003aae804
0
2.5
5
7.5
10
0
10
20
30
40
Q
G
(nC)
V
GS
(V)
V
DS
= 44V
14V
003aae802
10
10
2
10
3
10
4
10
-2
10
-1
1
10
10
2
V
DS
(V)
C
(pF)
C
iss
C
rss
C
oss
003aae807
0
15
30
45
60
0
0.3
0.6
0.9
1.2
V
SD
(V)
I
S
(A)
T
j
= 25
°
C
T
j
= 175
°
C
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