參數資料
型號： BUK6217-55C
廠商： NXP SEMICONDUCTORS
元件分類： 功率晶體管
英文描述： N-channel TrenchMOS intermediate level FET
中文描述： 44 A, 55 V, 0.0285 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
封裝： PLASTIC, SC-63, DPAK-3
文件頁數： 3/14頁
文件大?。?/td> 201K
代理商： BUK6217-55C
BUK6217-55C
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 02 — 4 October 2010
3 of 14
NXP Semiconductors
BUK6217-55C
N-channel TrenchMOS intermediate level FET
4.
Limiting values
[1]
-16V accumulated duration not to exceed 168 hrs
[2]
Accumulated pulse duration not to exceed 5mins.
[3]
Single-pulse avalanche rating limited by maximum junction temperature of 175 °C.
[4]
Repetitive avalanche rating limited by an average junction temperature of 170 °C.
[5]
Refer to application note AN10273 for further information.
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
Limiting values
Symbol
V
DS
V
GS
Parameter
drain-source voltage
gate-source voltage
Conditions
T
j
≥
25 °C; T
j
≤
175 °C
DC
Pulsed
T
mb
= 25 °C; V
GS
= 10 V; see
Figure 1
T
mb
= 100 °C; V
GS
= 10 V; see
Figure 1
T
mb
= 25 °C; t
p
≤
10 μs; pulsed;
see
Figure 3
T
mb
= 25 °C; see
Figure 2
Min
-
-16
-20
-
-
-
Max
55
16
20
44
31
175
Unit
V
V
V
A
A
A
[1]
[2]
I
D
drain current
I
DM
peak drain current
P
tot
T
stg
T
j
Source-drain diode
I
S
I
SM
Avalanche ruggedness
E
DS(AL)S
total power dissipation
storage temperature
junction temperature
-
-55
-55
80
175
175
W
°C
°C
source current
peak source current
T
mb
= 25 °C
t
p
≤
10 μs; pulsed; T
mb
= 25 °C
-
-
44
175
A
A
non-repetitive drain-source
avalanche energy
repetitive drain-source
avalanche energy
I
D
= 44 A; V
sup
≤
55 V; R
GS
= 50
;
V
GS
= 10 V; T
j(init)
= 25 °C; unclamped
-
45
mJ
E
DS(AL)R
[3][4][5]
-
-
J
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相關代理商/技術參數
參數描述
BUK6217-55C,118 功能描述:MOSFET N-CHAN 55V 44A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
BUK6218-40C 制造商:NXP Semiconductors 功能描述:MOSFETN CH40V42ASOT428 制造商:NXP Semiconductors 功能描述:MOSFET,N CH,40V,42A,SOT428 制造商:NXP Semiconductors 功能描述:MOSFET,N CH,40V,42A,SOT428; Transistor Polarity:N Channel; Continuous Drain Current Id:42A; Drain Source Voltage Vds:40V; On Resistance Rds(on):13.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.3V; No. of Pins:3 ;RoHS Compliant: Yes
BUK6218-40C,118 功能描述:MOSFET N-CHAN 40V 42A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
BUK6226-75C 制造商:NXP Semiconductors 功能描述:MOSFETN CH75V23ASOT428 制造商:NXP Semiconductors 功能描述:MOSFET,N CH,75V,23A,SOT428 制造商:NXP Semiconductors 功能描述:MOSFET,N CH,75V,23A,SOT428; Transistor Polarity:N Channel; Continuous Drain Current Id:33A; Drain Source Voltage Vds:75V; On Resistance Rds(on):24.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.3V; No. of Pins:3 ;RoHS Compliant: Yes
BUK6226-75C,118 功能描述:MOSFET N-CHAN 75V 33A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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