參數(shù)資料
型號: BUK6215-75C
廠商: NXP SEMICONDUCTORS
元件分類: 功率晶體管
英文描述: N-channel TrenchMOS FET
中文描述: 57 A, 75 V, 0.0205 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
封裝: PLASTIC, SC-63, DPAK-3
文件頁數(shù): 7/14頁
文件大小: 218K
代理商: BUK6215-75C
BUK6215-75C
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 02 — 4 October 2010
7 of 14
NXP Semiconductors
BUK6215-75C
N-channel TrenchMOS FET
Source-drain diode
V
SD
source-drain voltage
I
S
= 25 A; V
GS
= 0 V; T
j
= 25 °C;
see
Figure 16
-
0.8
1.2
V
t
rr
Q
r
reverse recovery time
I
S
= 20 A; dI
S
/dt = -100 A/μs;
V
GS
= 0 V; V
DS
= 25 V
-
51
-
ns
recovered charge
-
117
-
nC
Table 6.
Symbol
Characteristics
…continued
Parameter
Conditions
Min
Typ
Max
Unit
Fig 5.
Forward transconductance as a function of
drain current; typical values
Fig 6.
Output characteristics: drain current as a
function of drain-source voltage; typical values
Fig 7.
Transfer characteristics: drain current as a
function of gate-source voltage; typical values
Fig 8.
Drain-source on-state resistance as a function
of gate-source voltage; typical values.
003aae760
0
20
40
60
80
100
g
fs
(S)
0
20
40
60
I
D
(A)
003aae761
0
20
40
60
0
0.5
1
1.5
2
V
DS
(V)
I
D
(A)
4.0
4.5
6.0
10.0
3.3
3.2
V
GS
(V) = 3.8
3.4
3.6
003aae762
0
20
40
60
80
I
D
(A)
0
2
4
6
V
GS
(V)
T
j
= 25
°
C
T
j
= 175
°
C
003aae763
10
12
14
16
18
20
0
4
8
12
16
20
V
GS
(V)
R
DSon
(m
Ω
)
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