參數(shù)資料
型號(hào)： BUK6215-75C
廠商： NXP SEMICONDUCTORS
元件分類： 功率晶體管
英文描述： N-channel TrenchMOS FET
中文描述： 57 A, 75 V, 0.0205 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
封裝： PLASTIC, SC-63, DPAK-3
文件頁(yè)數(shù)： 6/14頁(yè)
文件大?。?/td> 218K
代理商： BUK6215-75C
BUK6215-75C
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 02 — 4 October 2010
6 of 14
NXP Semiconductors
BUK6215-75C
N-channel TrenchMOS FET
6.
Characteristics
Table 6.
Symbol
Static characteristics
Characteristics
Parameter
Conditions
Min
Typ
Max
Unit
V
(BR)DSS
drain-source breakdown
voltage
I
D
= 250 μA; V
GS
= 0 V; T
j
= 25 °C
I
D
= 250 μA; V
GS
= 0 V; T
j
= -55 °C
I
D
= 1 mA; V
DS
= V
GS
; T
j
= 25 °C;
see
Figure 9
; see
Figure 10
75
-
-
V
68
-
-
V
V
GS(th)
gate-source threshold voltage
1.8
2.3
2.8
V
I
D
= 1 mA; V
DS
= V
GS
; T
j
= -55 °C;
see
Figure 9
-
-
3.3
V
I
D
= 1 mA; V
DS
= V
GS
; T
j
= 175 °C;
see
Figure 9
0.8
-
-
V
I
DSS
drain leakage current
V
DS
= 75 V; V
GS
= 0 V; T
j
= 175 °C
V
DS
= 75 V; V
GS
= 0 V; T
j
= 25 °C
V
DS
= 0 V; V
GS
= 20 V; T
j
= 25 °C
V
DS
= 0 V; V
GS
= -20 V; T
j
= 25 °C
V
GS
= 10 V; I
D
= 15 A; T
j
= 25 °C;
see
Figure 11
-
-
500
μA
-
0.02
1
μA
I
GSS
gate leakage current
-
2
100
nA
-
2
100
nA
R
DSon
drain-source on-state
resistance
-
12.5
15
m
V
GS
= 4.5 V; I
D
= 15 A; T
j
= 25 °C;
see
Figure 11
-
15.3
20.5
m
V
GS
= 5 V; I
D
= 15 A; T
j
= 25 °C;
see
Figure 11
-
14.4
18
m
V
GS
= 10 V; I
D
= 15 A; T
j
= 175 °C;
see
Figure 11
; see
Figure 12
-
-
39
m
Dynamic characteristics
Q
G(tot)
total gate charge
I
D
= 25 A; V
DS
= 60 V; V
GS
= 5 V;
see
Figure 13
; see
Figure 14
-
34.8
-
nC
I
D
= 25 A; V
DS
= 60 V; V
GS
= 10 V;
see
Figure 13
; see
Figure 14
-
61.8
-
nC
Q
GS
Q
GD
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
L
D
gate-source charge
-
8.7
-
nC
gate-drain charge
-
18.8
-
nC
input capacitance
V
GS
= 0 V; V
DS
= 25 V; f = 1 MHz;
T
j
= 25 °C; see
Figure 15
-
2920
3900
pF
output capacitance
-
240
290
pF
reverse transfer capacitance
-
159
220
pF
turn-on delay time
V
DS
= 55 V; R
L
= 2.2
; V
GS
= 10 V;
R
G(ext)
= 10
-
16.6
-
ns
rise time
-
37.4
-
ns
turn-off delay time
-
126
-
ns
fall time
-
69
-
ns
internal drain inductance
from upper edge of drain mounting
base to centre of die. ; T
j
= 25 °C
from source lead to source bond
pad ; T
j
= 25 °C
-
3.5
-
nH
L
S
internal source inductance
-
7.5
-
nH
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參數(shù)描述
BUK6215-75C,118 功能描述:MOSFET N-CHAN 75V 57A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
BUK6217-55C 制造商:NXP Semiconductors 功能描述:MOSFETN CH44V31ASOT428 制造商:NXP Semiconductors 功能描述:MOSFET,N CH,44V,31A,SOT428 制造商:NXP Semiconductors 功能描述:MOSFET,N CH,44V,31A,SOT428; Transistor Polarity:N Channel; Continuous Drain Current Id:44A; Drain Source Voltage Vds:55V; On Resistance Rds(on):16mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.3V; No. of Pins:3 ;RoHS Compliant: Yes
BUK6217-55C,118 功能描述:MOSFET N-CHAN 55V 44A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
BUK6218-40C 制造商:NXP Semiconductors 功能描述:MOSFETN CH40V42ASOT428 制造商:NXP Semiconductors 功能描述:MOSFET,N CH,40V,42A,SOT428 制造商:NXP Semiconductors 功能描述:MOSFET,N CH,40V,42A,SOT428; Transistor Polarity:N Channel; Continuous Drain Current Id:42A; Drain Source Voltage Vds:40V; On Resistance Rds(on):13.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.3V; No. of Pins:3 ;RoHS Compliant: Yes
BUK6218-40C,118 功能描述:MOSFET N-CHAN 40V 42A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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