參數(shù)資料
型號(hào)： BUK6212-40C
廠(chǎng)商： NXP SEMICONDUCTORS
元件分類(lèi)： 功率晶體管
英文描述： N-channel TrenchMOS intermediate level FET
中文描述： 50 A, 40 V, 0.02 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
封裝： PLASTIC, SC-63, DPAK-3
文件頁(yè)數(shù)： 3/14頁(yè)
文件大?。?/td> 180K
代理商： BUK6212-40C
BUK6212-40C
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 2 — 21 September 2010
3 of 14
NXP Semiconductors
BUK6212-40C
N-channel TrenchMOS intermediate level FET
4.
Limiting values
[1]
Accumulated pulse duration not to exceed 5 minutes.
[2]
-16V accumulated duration not to exceed 168 hrs.
[3]
Continuous current is limited by package.
[4]
Single-pulse avalanche rating limited by maximum junction temperature of 175 °C.
[5]
Repetitive avalanche rating limited by an average junction temperature of 170 °C.
[6]
Refer to application note AN10273 for further information.
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
Limiting values
Symbol
V
DS
V
GS
Parameter
drain-source voltage
gate-source voltage
Conditions
T
j
≥
25 °C; T
j
≤
175 °C
Pulsed
DC
T
mb
= 25 °C; V
GS
= 10 V; see
Figure 1
T
mb
= 100 °C; V
GS
= 10 V; see
Figure 1
T
mb
= 25 °C; t
p
≤
10 μs; pulsed;
see
Figure 3
see
Figure 2
Min
-
-20
-16
-
-
-
Max
40
20
16
50
41
233
Unit
V
V
V
A
A
A
[1]
[2]
I
D
drain current
[3]
I
DM
peak drain current
P
tot
T
stg
T
j
Source-drain diode
I
S
I
SM
Avalanche ruggedness
E
DS(AL)S
total power dissipation
storage temperature
junction temperature
-
-55
-55
80
175
175
W
°C
°C
source current
peak source current
T
mb
= 25 °C
t
p
≤
10 μs; pulsed; T
mb
= 25 °C
[3]
-
-
50
233
A
A
non-repetitive drain-source
avalanche energy
repetitive drain-source
avalanche energy
I
D
= 50 A; V
sup
≤
40 V; V
GS
= 10 V;
T
j(init)
= 25 °C; unclamped
-
55
mJ
E
DS(AL)R
[4][5][6]
-
-
J
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