參數(shù)資料
型號(hào): BUK6209-30C
廠商: NXP SEMICONDUCTORS
元件分類: 功率晶體管
英文描述: N-channel TrenchMOS intermediate level FET
中文描述: 50 A, 30 V, 0.0192 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
封裝: PLASTIC, SC-63, DPAK-3
文件頁(yè)數(shù): 8/14頁(yè)
文件大?。?/td> 359K
代理商: BUK6209-30C
BUK6209-30C
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 2 — 1 October 2010
8 of 14
NXP Semiconductors
BUK6209-30C
N-channel TrenchMOS intermediate level FET
Fig 9.
Gate-source threshold voltage as a function of
junction temperature
Fig 10. Sub-threshold drain current as a function of
gate-source voltage
Fig 11. Drain-source on-state resistance as a function
of drain current; typical values
Fig 12. Normalized drain-source on-state resistance
factor as a function of junction temperature
003aad805
0
1
2
3
4
-60
0
60
120
180
T
j
(
°
C)
V
GS(th)
(V)
max
typ
min
003aad806
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
I
D
(A)
0
1
2
3
4
V
GS
(V)
max
typ
min
003aae790
0
10
20
30
40
50
0
20
40
60
I
D
(A)
R
DSon
(m
)
10.0
6.0
4.5
3.8
V
GS
(V) = 3.6
5.0
4.0
03aa27
0
0.5
1
1.5
2
60
0
60
120
180
T
j
(
°
C)
a
相關(guān)PDF資料
PDF描述
BUK6210-55C N-channel TrenchMOS intermediate level FET
BUK6211-75C N-channel TrenchMOS FET
BUK6212-40C N-channel TrenchMOS intermediate level FET
BUK6213-30A N-channel TrenchMOS intermediate level FET
BUK6213-30C N-channel TrenchMOS intermediate level FET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
BUK6209-30C,118 功能描述:MOSFET N-CHAN 30V 50A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
BUK6210-55C 制造商:NXP Semiconductors 功能描述:MOSFETN CH55V55ASOT428 制造商:NXP Semiconductors 功能描述:MOSFET,N CH,55V,55A,SOT428
BUK6210-55C,118 功能描述:MOSFET N-CHAN 55V 78A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
BUK6211-75C 制造商:NXP Semiconductors 功能描述:MOSFETN CH75V52ASOT428 制造商:NXP Semiconductors 功能描述:MOSFET,N CH,75V,52A,SOT428 制造商:NXP Semiconductors 功能描述:MOSFET,N CH,75V,52A,SOT428; Transistor Polarity:N Channel; Continuous Drain Current Id:74A; Drain Source Voltage Vds:75V; On Resistance Rds(on):9.3mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.3V; No. of Pins:3 ;RoHS Compliant: Yes
BUK6211-75C,118 功能描述:MOSFET N-CHAN 75V 74A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube